Philips br211sm DATASHEETS
Philips Semiconductors Preliminary specification
Breakover diodes BR211SM series
GENERAL DESCRIPTION QUICK REFERENCE DATA
A range of bidirectional, breakover SYMBOL PARAMETER MIN. MAX. UNIT diodes in a two terminal, surface mounting, plastic envelope. These BR211SM-140 to BR211SM-280 devicesfeature controlled breakover V voltage and high holding current I together with high peak current I handling capability. Typical
(BO)
H
TSM
application is transient overvoltage
protection in telecommunications
equipment.
OUTLINE - SOD106 SYMBOL
Breakover voltage 140 280 V
Holding current 150 - mA
Non-repetitive peak current - 40 A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
TSM1
D
Continuous voltage - 75% of V
V
Non repetitive peak current 10/320 µs impulse equivalent to - 40 A
(BO)typ
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
I
TSM2
I2tI
Non repetitive on-state current half sine wave; t = 10 ms; - 15 A
2
t for fusing tp = 10 ms - 1.1 A2s
Tj = 70 ˚C prior to surge
dIT/dt Rate of rise of on-state current tp = 10 µs - 50 A/µs
after V
P
tot
P
TM
T
stg
T
a
T
vj
Continuous dissipation Ta = 25˚C - 1.2 W
Peak dissipation tp = 1 ms; Ta = 25˚C - 50 W
Storage temperature - 40 150 ˚C
Operating ambient temperature off-state - 70 ˚C
Overload junction temperature on-state - 150 ˚C
turn-on
(BO)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
Z
th j-sp
th j-a
th j-a
Thermal resistance junction to - - 12 K/W
solder point
Thermal resistance junction to pcb mounted; minimum footprint - 100 - K/W
ambient
Thermal impedance junction to tp = 1 ms - 2.62 - K/W
ambient
August 1996 1 Rev 1.100
Philips Semiconductors Preliminary specification
Breakover diodes BR211SM series
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1
V
TM
V
(BR)
V
(BO)
S
(br)
2
I
H
3
I
S
4
I
D
On-state voltage ITM = 2 A - - 2.5 V
Avalanche voltage (min) I
Breakover voltage (max) I ≤ IS, tp = 100 µs
(BR)
= 10
mA
BR211SM-140 123 140 157 V
BR211SM-160 140 160 180 V
BR211SM-180 158 180 202 V
BR211SM-200 176 200 224 V
BR211SM-220 193 220 247 V
BR211SM-240 211 240 269 V
BR211SM-260 228 260 292 V
BR211SM-280 246 280 314 V
Temperature coefficient of V
(BR)
- +0.1 - %/K
Holding current Tj = 25˚C 150 - - mA
Tj = 70˚C 100 - - mA
Switching current tp = 100 µs 10 200 1000 mA
Off-state current VD = 85% V
, Tj = 70˚C - - 10 µA
(BR)min
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Linear rate of rise of off-state V
voltage that will not trigger any
device
C
j
Off-state capacitance VD = 0 V; f = 1 kHz to 1 MHz - - 100 pF
IT
IH
VT
V(BR)
I(BR)
ID
VD
Symbol
Symmetric BOD
IS
V(BO)
voltage
current
Fig.1. Definition of breakover diode characteristics
= 85% V
(DM)
; Tj = 70 ˚C - - 2000 V/µs
(BR)min
current
100%
90%
50%
30%
0
10us
.
Fig.2. Test waveform for high voltage impulse (I
ITSM
time
700us
according to CCITT vol IX-Rec K17.
TSM1
)
1 Measured under pulsed conditions to avoid excessive dissipation
2 The minimum current at which the diode will remain in the on-state
3 The avalanche current required to switch the diode to the on-state
4 Measured at maximum recommended continuous voltage. Relative humidity < 65%.
August 1996 2 Rev 1.100
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