Philips br211 DATASHEETS
Philips Semiconductors Product specification
Breakover diodes BR211 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
A range of bidirectional, breakover SYMBOL PARAMETER MIN. MAX. UNIT
diodes in an axial, hermetically
sealed, glass envelope. These BR211-140 to 280
devicesfeature controlled breakover V
voltage and high holding current I
together with high peak current I
handling capability. Typical
(BO)
H
TSM
applications include transient
overvoltage protection in
telecommunications equipment.
OUTLINE - SOD84 SYMBOL
BR211-XXX
XXX denotes voltage grade
Breakover voltage 140 280 V
Holding current 150 - mA
Non-repetitive peak current - 40 A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
D
I
TSM1
I
TSM2
I2tI
dIT/dt Rate of rise of on-state current tp = 10 µs - 50 A/µs
P
tot
P
TM
T
stg
T
a
T
vj
Continuous voltage - 75% of V
V
Non repetitive peak current 10/320 µs impulse equivalent to - 40 A
(BO)typ
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
Non repetitive on-state current half sine wave; t = 10 ms; - 15 A
2
t for fusing tp = 10 ms - 1.1 A2s
after V
turn-on
(BO)
Tj = 70 ˚C prior to surge
Continuous dissipation Ta = 25˚C - 1.2 W
Peak dissipation tp = 1 ms; Ta = 25˚C - 50 W
Storage temperature -65 150 ˚C
Operating ambient temperature off-state - 70 ˚C
Overload junction temperature on-state - 150 ˚C
August 1996 1 Rev 1.200
Philips Semiconductors Product specification
Breakover diodes BR211 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-e
R
th j-a
Z
th j-a
R
th e-tp
R
th e-a
R
th tp-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1
V
TM
V
(BR)
V
(BO)
S
(br)
2
I
H
3
I
S
4
I
D
Thermal resistance junction to - 22 - K/W
envelope
Thermal resistance junction to mounted as fig:12 - 105 K/W
ambient
Thermal impedance junction to tp = 1 ms - 2.62 - K/W
ambient
Thermal resistance envelope to lead length = 5 mm - 15 - K/W
tie point lead length = 10 mm - 30 - K/W
Thermal resistance envelope to lead length = 5 mm - 440 - K/W
ambient lead length = 10 mm - 350 - K/W
Thermal resistance tie point to mounted as fig:12 - 70 - K/W
ambient mounted with 1 cm2 copper - 55 - K/W
laminate per lead.
mounted with 2.25 cm2 copper - 45 - K/W
laminate per lead
On-state voltage ITM = 2 A - - 2.5 V
Avalanche voltage (min) I
Breakover voltage (max) I ≤ IS, tp = 100 µs
(BR)
= 10
mA
BR211-140 123 140 157 V
BR211-160 140 160 180 V
BR211-180 158 180 202 V
BR211-200 176 200 224 V
BR211-220 193 220 247 V
BR211-240 211 240 269 V
BR211-260 228 260 292 V
BR211-280 246 280 314 V
V
V
Temperature coefficient of V
Holding current Tj = 25˚C 150 - - mA
(BR)
- +0.1 - %/K
Tj = 70˚C 100 - - mA
Switching current tp = 100 µs 10 200 1000 mA
Off-state current VD = 85% V
, Tj = 70˚C - - 10 µA
(BR)min
1 Measured under pulsed conditions to avoid excessive dissipation
2 The minimum current at which the diode will remain in the on-state
3 The avalanche current required to switch the diode to the on-state
4 Measured at maximum recommended continuous voltage. Illuminance ≤ 500 lux (daylight); relative
humidity < 65%.
August 1996 2 Rev 1.200
Philips Semiconductors Product specification
Breakover diodes BR211 series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Linear rate of rise of off-state V
voltage that will not trigger any
device
C
j
Off-state capacitance VD = 0 V; f = 1 kHz to 1 MHz - - 100 pF
= 85% V
(DM)
; Tj = 70 ˚C - - 2000 V/µs
(BR)min
IT
IH
VT
V(BR)
I(BR)
ID
VD
Symbol
Symmetric BOD
IS
V(BO)
voltage
current
Fig.1. Definition of breakover diode characteristics
current
100%
90%
50%
30%
0
10us
Fig.2. Test waveform for high voltage impulse (I
according to CCITT vol IX-Rec K17.
ITSM
time
700us
TSM1
ITSM / A
20
15
10
5
0
1 10 100 1000 10000
.
Fig.3. Maximum permissible non-repetitive on-state
BR211
I
Number of impulses
ITSM2
time
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; Tj = 70˚C
prior to surge.
V(BR)(Tj)
V(BR)(25 C)
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
)
Fig.4. Normalised avalanche breakdown voltage V
and V
-20 0 20 40 60 80 100
-40
as a function of temperature.
(BO)
Tj / C
(BR)
August 1996 3 Rev 1.200
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