Philips BLY89C Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLY89C
VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
VHF power transistor BLY89C
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a
nominal supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V. It has a
3/8" capstan envelope with a ceramic
cap. All leads are isolated from the
stud.
QUICK REFERENCE DATA
R.F. performance up to T
=25°C in an unneutralized common-emitter class-B circuit
h
MODE OF OPERATION V
c.w. 13,5 175 25 >6 >70 1,6 + j1,4 210 + j5,5
PIN CONFIGURATION
alfpage
4
2
Fig.1 Simplified outline and symbol.
CC
V
31
handbook, halfpage
MSB056
f
MHz
MBB012
P
L
W
G
dB
p
η
%
z
i
Ω
Y
mS
L
PINNING - SOT120
PIN DESCRIPTION
1 collector
2 emitter
3 base
c
b
e
4 emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
VHF power transistor BLY89C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
BE
=0)
CESM
CEO
EBO
C(AV)
CM
=25°CP
mb
rf
max 36 V
max 18 V
max 4 V
max 6 A
max 12 A
max 73 W
10
handbook, halfpage
I
C
(A)
1
11010
Th = 70 °C
Fig.2 D.C. soar.
T
mb
= 25 °C
VCE (V)
MGP864
2
80
handbook, halfpage
P
rf
(W)
60
40
20
0 100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
ΙΙΙ
derate by
0.38 W/K
ΙΙ
derate by
0.29 W/K
Ι
50
Th (°C)
MGP865
Fig.3 R.F. power dissipation; VCE≤ 16,5 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation 20 W; T
=79°C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
August 1986 3
th j-mb(dc)
th j-mb(rf)
th mb-h
= 3,1 K/W
= 2,3 K/W
= 0,45 K/W
Philips Semiconductors Product specification
VHF power transistor BLY89C
CHARACTERISTICS
T
=25°C
j
Breakdown voltage
Collector-emitter voltage
=0;IC=25mA V
V
BE
(BR)CES
Collector-emitter voltage
open base; I
=50mA V
C
(BR)CEO
Emitter-base voltage
open collector; IE=10mA V
(BR)EBO
Collector cut-off current
= 0; VCE=18V I
V
BE
CES
Transient energy
L = 25 mH; f = 50 Hz
open base E > 8ms
−VBE= 1,5 V; RBE=33Ω E > 8ms
D.C. current gain
IC= 2,5 A; VCE=5V h
Collector-emitter saturation voltage
IC= 7,5 A; IB= 1,5 A V
Transition frequency at f = 100 MHz
IC= 2,5 A; VCE= 13,5 V f
I
= 7,5 A; VCE= 13,5 V f
C
(1)
FE
(1)
CEsat
(1)
T
T
Collector capacitance at f = 1 MHz
I
= 0; VCB=15V C
E=Ie
c
> 36 V
> 18 V
> 4V
< 10 mA
typ 50
10 to 80
typ 1,7 V
typ 800 MHz
typ 750 MHz
typ 65 pF
< 90 pF
Feedback capacitance at f = 1 MHz
= 100 mA; VCE=15V C
I
C
Collector-stud capacitance
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0,02.
p
August 1986 4
re
C
cs
typ 41 pF
typ 2 pF
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