Philips BLY87C Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLY87C

VHF power transistor

Product specification
File under Discrete Semiconductors, SC08a

August 1986

Philips Semiconductors Product specification

VHF power transistor BLY87C

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage 16,5 V.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

= 25 °C in an unneutralized common-emitter class-B circuit

h

CE

V

c.w. 13,5 175 8 > 12,0 > 60 2,2 + j0,4 96 − j28

c.w. 12,5 175 8 typ. 11,5 typ. 65 −−

PIN CONFIGURATION

alfpage

4

31

handbook, halfpage

It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.

f

MHz

P

W

L

G

p

dB

c

b

η

%

z

i

Ω

PINNING - SOT120

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

Y

mS

L

MBB012

2

MSB056

e

Fig.1 Simplified outline and symbol.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

VHF power transistor BLY87C

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

= 0)

CESM
CEO

EBO
C(AV)
CM

=25°CP

mb

rf

stg

j

max. 36 V
max. 18 V
max. 4 V
max. 1,5 A
max. 4,0 A
max. 20 W

−65 to + 150 °C
max. 200 °C

handbook, halfpage

2

I

C

(A)

1.5

1

0.5
510 20

Tmb = 25 °CTh = 70 °C

15

Fig.2 D.C. SOAR.

VCE (V)

MGP820

30

handbook, halfpage

P

rf

(W)

20

10

0

0 100

I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch

ΙΙΙ

derate by 0.12 W/K

ΙΙ

Ι

0.1 W/K

50

Th (°C)

Fig.3 R.F. power dissipation; VCE≤ 16,5 V;

f > 1 MHz.

MGP821

THERMAL RESISTANCE

(dissipation = 8 W; T

= 73,5 °C, i.e. Th= 70 °C)

mb

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

August 1986 3

th j-mb(dc)
th j-mb(rf)
th mb-h

= 10,7 K/W
= 8,6 K/W
= 0,45 K/W

Philips Semiconductors Product specification

VHF power transistor BLY87C

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

V

= 0; IC= 5 mA V

BE

Collector-emitter breakdown voltage

open base; IC= 25 mA V

Emitter-base breakdown voltage

open collector; IE= 1 mA V

Collector cut-off current

VBE= 0; VCE= 18 V I

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

(1)

IC= 0,75 A; VCE=5 V h

(BR) CES

(BR)CEO

(BR)EBO

CES

SBO
SBR

FE

> 36 V

> 18 V

> 4V

< 2mA

> 0,5 mJ
> 0,5 mJ

typ. 40

10 to 100

Collector-emitter saturation voltage

(1)

IC= 2 A; IB= 0,4 A V

Transition frequency at f = 100 MHz

(1)

−IE= 0,75 A; VCB= 13,5 V f

−I

= 2 A; VCB= 13,5 V f

E

Collector capacitance at f = 1 MHz

IE=Ie=0;VCB= 13,5 V C

Feedback capacitance at f = 1 MHz

IC= 100 mA; VCE= 13,5 V C

Collector-stud capacitance C

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

CEsat

T
T

c

re
cs

typ. 0,85 V

typ. 950 MHz
typ. 850 MHz

typ. 16,5 pF

typ. 12 pF
typ. 2 pF

August 1986 4