Philips BLX94C Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLX94C
UHF power transistor
Product specification
1996 Feb 06
Philips Semiconductors Product specification
UHF power transistor BLX94C
FEATURES
• Withstands full load mismatch
• Emitter ballasting resistors for an optimum temperature
profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Transmitting applications in the UHF range with a
nominal supply voltage up to 28 V.
PINNING - SOT122A
PIN SYMBOL DESCRIPTION
1 c collector
2 e emitter
3 b base
4 e emitter
QUICK REFERENCE DATA
RF performance at T
=25°C in a common emitter test circuit.
h
DESCRIPTION
NPN silicon planar epitaxial transistor primarily intended
for class-A, B or C operation. The transistor is
encapsulated in a 4-lead SOT122A stud envelope with a
ceramic cap.
handbook, halfpage
4
c
31
b
2
MAM229
e
Fig.1 Simplified outline and symbol.
MODE OF
OPERATION
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-B 470 28 25 >6.5 >55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Feb 06 2
Philips Semiconductors Product specification
UHF power transistor BLX94C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
V
EBO
I
C
I
C(AV)
I
CM
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
collector-emitter voltage (peak value) VBE=0 − 65 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 4V
collector current (DC) − 2.5 A
average collector current − 2.5 A
peak collector current f > 1 MHz − 6A
total power dissipation ≤ Tmb=25°C − 60 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
thermal resistance from junction to
P
=20W;Tmb=82°C; Th=70°C 4 K/W
tot
mounting base (DC dissipation)
R
th j-mb
thermal resistance from junction to
P
=20W;Tmb=82°C; Th=70°C 2.7 K/W
tot
mounting base (RF dissipation)
R
th mb-h
thermal resistance from mounting base
P
=20W;Tmb=82°C; Th=70°C 0.6 K/W
tot
to heatsink
10
handbook, halfpage
I
C
(A)
1
−1
10
11010
(1)(2)
VCE (V)
MBH096
2
60
handbook, halfpage
P
tot
(W)
50
40
30
20
10
0 100
(3)
(2)
(1)
50 Th (
MBH097
o
C)
(1) Tmb=25°C.
(2) Th=70°C.
Fig.2 DC SOAR.
1996 Feb 06 3
(1) Continuous DC operation.
(2) Continuous RF operation.
(3) Short-time operation during mismatch.
Fig.3 Power derating curves.
Philips Semiconductors Product specification
UHF power transistor BLX94C
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CES
E
SBR
h
FE
f
T
C
c
C
re
C
c-s
collector-emitter breakdown voltage VBE= 0; IC=25mA 65 −−V
collector-emitter breakdown voltage open base; IC= 100 mA 30 −−V
emitter-base breakdown voltage open collector; IE=10mA 4 −−V
collector-emitter saturation voltage IC= 4 A; IB= 0.8 A; note 1 − 1.5 − V
collector cut-off current VBE= 0; VCE=30V −−10 mA
second breakdown energy open base; L = 25 mH; f = 50 Hz 3 −−mJ
=10Ω; L = 25 mH; f = 50 Hz 3 −−mJ
R
BE
DC current gain VCE=5V; IC= 1.5 A; note 1 15 50 −
transition frequency VCB= 28 V; IE= −1.5 A;
− 1.1 − f
T
f = 500 MHz; note 1
VCB= 28 V; IE= −4A;
− 0.75 − f
T
f = 500 MHz; note 1
collector capacitance VCB= 28 V; IE=ie= 0; f = 1 MHz − 33 − pF
feedback capacitance VCE= 28 V; IC= 20 mA; f = 1 MHz; − 18 − pF
collector-stud capacitance − 1.2 − pF
Note
1. Measured under pulsed conditions: t
100
handbook, halfpage
h
FE
50
0
04
Measured under pulsed conditions; tp≤ 200 µs; δ≤0.02;Tj=25°C.
(1) VCE=25V.
(2) VCE=5V.
2I
≤ 200 µs; δ≤0.02.
p
MBH099
VCE = 25 V
5 V
(A)
C
75
handbook, halfpage
C
c
(pF)
50
25
0
040
IE=ie= 0; f = 1 MHz; Tj=25°C.
MBH098
20 VCB (V)
Fig.4 DC current gain as a function of collector
current; typical values.
1996 Feb 06 4
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
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