Philips BLW96 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW96

HF/VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated high power
industrial and military transmitting

conditions. Transistors are supplied
in matched h

groups.

FE

The transistor has a1⁄2" flange
envelope with a ceramic cap. All

leads are isolated from the flange.
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch

QUICK REFERENCE DATA

R.F. performance up to T

=25°C

h

I
MODE OF
OPERATION

s.s.b. (class-AB) 50 1,6 − 28 25 − 200 (P.E.P.) > 13,5 > 40

V

CE

V

f

MHz

P

W

L

G

p

dB

%

η

(1)

d

dB

3

d

dB

5

<−30 <−30 0,1

c.w. (class-B) 50 108 200 typ. 6,5 typ. 67 −−(6)
s.s.b. (class-A) 40 28 50 (P.E.P.) typ. 19 − typ. −40 <−40 (4)

Note

1. η

at 200 W P.E.P.

dt

C(ZS)

(IC)

A

PIN CONFIGURATION

PINNING - SOT121B.

PIN DESCRIPTION

handbook, halfpage

43

1 collector
2 emitter
3 base
4 emitter

21

MLA876

Fig.1 Simplified outline. SOT121B.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

=0)

CESM
CEO

EBO
C(AV)
CM

=45°CP

mb

rf

stg

j

max. 110 V
max. 55 V
max. 4 V
max. 12 A
max. 40 A
max. 340 W

−65 to + 150 °C

max. 200 °C

2

10

handbook, halfpage

I

C

(A)

10

Th = 70 °C

1

10 10

Fig.2 D.C. SOAR.

MGP685

Tmb = 45 °C

VCE (V)

400

handbook, halfpage

P

tot

(W)

300

200

100

2

0

0 50 100 150

I Continuous d.c. operation
II Continuous r.f. operation; f >1 MHz
III Short-time operation during mismatch; f > 1 MHz

ΙΙΙ

derate by

1.58 W/K

ΙΙ

Ι

1.35 W/K

MGP686

Th (°C)

Fig.3 Power/temperature derating curves.

THERMAL RESISTANCE

(dissipation = 150 W; T

= 100 °C, i.e. Th=70°C)

mb

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

August 1986 3

th j-mb(dc)
th j-mb(rf)
th mb-h

= 0,63 K/W
= 0,45 K/W
= 0,2 K/W

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

V

=0;IC=50mA V

BE

Collector-emitter breakdown voltage

open base; IC= 200 mA V

Emitter-base breakdown voltage

open collector; IE=20mA V

Collector cut-off current

VBE=0;VCE=55V I

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

(1)

IC= 7 A; VCE=5 V h

(BR)CES

(BR)CEO

(BR)EBO

CES

SBO
SBR

FE

> 110 V

> 55 V

> 4V

< 10 mA

> 20 mJ
> 20 mJ

typ.

15 to3050

D.C. current gain ratio of matched devices

(1)

IC= 7 A; VCE=5V h

Collector-emitter saturation voltage

(1)

IC= 20 A; IB = 4 A V

Transition frequency at f = 100 MHz

(2)

−IE= 7 A; VCB= 45 V f
= 20 A; VCB= 45 V f

−I

E

Collector capacitance at f = 1 MHz

IE=Ie= 0; VCB=50V

Feedback capacitance at f = 1 MHz C

I

= 150 mA; VCE=50V C

C

Collecting-flange capacitance C

Notes

1. Measured under pulse conditions: t

≤ 300 µs; δ≤0,02.

p

2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.

FE1/hFE2

CEsat

T
T

c
re
cf

≤ 1,2

typ. 1,9 V

typ. 235 MHz
typ. 245 MHz

typ. 280 pF
typ. 170 pF
typ. 4,4 pF

August 1986 4

Philips Semiconductors Product specification

HF/VHF power transistor BLW96

10

handbook, halfpage

−I

E

(A)

1

−1

10

−2

10

MGP687

Th = 70 °C

25 °C

VBE (mV)

Fig.4 Typical values; VCE= 40 V.

50

handbook, halfpage

h

FE

40

30

20

10

1250500 1000750

0

010

VCE = 45 V

20

MGP688

15 V

5 V

(A)

30

I

C

Fig.5 Typical values; Tj=25°C.

300

handbook, halfpage

f

T

(MHz)

200

100

0

0 102030

VCB = 45 V

15 V

5 V

MGP689

−IE (A)

Fig.6 Typical values; f = 100 MHz; Tj=25°C.

August 1986 5

1000

handbook, halfpage

C

c

(pF)

750

500

250

0

0 255075

Fig.7 IE=Ie= 0; f = 1 MHz; Tj=25°C.

MGP690

typ

VCB (V)