Philips BLW87 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW87
VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
VHF power transistor BLW87
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
QUICK REFERENCE DATA
R.F. performance up to T
=25°C in an unneutralized common-emitter class-B circuit
h
MODE OF OPERATION V
V
c.w. 13,5 175 25 > 6 > 70 1,6 + j1,4 210 + j5,5
PIN CONFIGURATION
lfpage
1
4
handbook, halfpage
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
CE
f
MHz
P
L
W
b
G
dB
p
%
η
z
i
Ω
Y
mS
L
PINNING - SOT123
PIN DESCRIPTION
1 collector
2 emitter
c
3 base
4 emitter
MBB012
23
MSB057
e
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
VHF power transistor BLW87
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
= 0)
CESM
CEO
EBO
C(AV)
CM
= 25 °CP
mb
rf
stg
j
max. 36 V
max. 18 V
max. 4 V
max. 6 A
max. 12 A
max. 76 W
−65 to + 150 °C
max. 200 °C
CE
(V)
MGP649
2
100
handbook, halfpage
P
rf
(W)
50
0
0 50 100 150
continuous
r.f. operation
derate by
0.42 W/K
continuous
d.c. operation
derate by
0.32 W/K
Fig.3 R.F. power dissipation; VCE≤ 16,5 V; f ≥ 1 MHz.
10
handbook, halfpage
I
C
(A)
1
11010
Th = 70 °C
Tmb = 25 °C
V
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 20 W; T
=76°C; i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
short-time
operation
during mismatch
th j-mb(dc)
th j-mb(rf)
th mb-h
MGP650
Th (°C)
= 3,0 K/W
= 2,25 K/W
= 0,3 K/W
August 1986 3
Philips Semiconductors Product specification
VHF power transistor BLW87
CHARACTERISTICS
T
=25°C
j
Collector-emitter breakdown voltage
V
= 0; IC= 25 mA V
BE
Collector-emitter breakdown voltage
open base; IC= 50 mA V
Emitter-base breakdown voltage
open collector; IE= 10 mA V
Collector cut-off current
VBE= 0; VCE= 18 V I
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
I
= 2,5 A; VCE=5 V h
C
Collector-emitter saturation voltage
(1)
(1)
IC= 7,5 A; IB= 1,5 A V
Transition frequency at f = 100 MHz
(1)
−IE= 2,5 A; VCB= 13,5 V f
−I
= 7,5 A; VCB= 13,5 V f
E
Collector capacitance at f = 1 MHz
I
= 0; VCB= 15 V C
E=Ie
Feedback capacitance at f = 1 MHz
IC= 100 mA; VCE= 15 V C
Collector-flange capacitance C
(BR) CES
(BR) CEO
(BR)EBO
CES
SBO
SBR
FE
CEsat
T
T
c
re
cf
> 36 V
> 18 V
> 4V
< 10 mA
> 8mJ
> 8mJ
typ. 50
10 to 80
typ. 1,7 V
typ. 800 MHz
typ. 750 MHz
typ. 65 pF
typ. 41 pF
typ. 2 pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0,02.
p
August 1986 4
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