Philips BLW86 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW86
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
AB and B operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Matched
hFEgroups are available on request.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF
OPERATION
=25°C
h
V
CE
V
f
MHz
P
W
L
G
p
dB
%
η
z
i
Ω
Y
mS
L
d
3
dB
c.w. (class-B) 28 175 45 > 7,5 > 70 0,7 + j1,3 110 − j62 −
s.s.b. (class-AB) 28 1,6 − 28 5−47,5 (P.E.P.) typ. 19 typ. 45 −−typ. −30
s.s.b. (class-A) 26 1,6 − 28 17 (P.E.P.) typ. 22 −−−typ. −42
PIN CONFIGURATION
PINNING - SOT123
lfpage
1
23
4
handbook, halfpage
MSB057
MBB012
c
b
e
1 collector
2 emitter
3 base
4 emitter
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
PIN DESCRIPTION
August 1986 2
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open-collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
=0)
CESM
CEO
EBO
C(AV)
CM
=25°CP
mb
rf
stg
j
max. 65 V
max. 36 V
max. 4 V
max. 4 A
max. 12 A
max. 105 W
−65 to + 150 °C
max. 200 °C
10
handbook, halfpage
I
C
(A)
1
10 10
Th = 70 °C Tmb = 25 °C
Fig.2 D.C. SOAR.
VCE (V)
MGP630
150
handbook, halfpage
P
rf
(W)
100
50
2
0
0 50 100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
ΙΙΙ
derate by 0.58 W/K
ΙΙ
0.43 W/K
Ι
Th (°C)
MGP631
Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation = 45 W; T
= 83,5 °C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
August 1986 3
th j-mb(dc)
th j-mb(rf)
th mb-h
= 2,65 K/W
= 1,95 K/W
= 0,3 K/W
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
CHARACTERISTICS
T
=25°C unless otherwise specified
j
Collector-emitter breakdown voltage
V
=0;IC=25mA V
BE
Collector-emitter breakdown voltage
open base; IC= 100 mA V
Emitter-base breakdown voltage
open collector; IE=10mA V
Collector cut-off current
VBE= 0; VCE=36V I
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
(1)
IC= 2,5 A; VCE=5V
D.C. current gain ratio of matched devices
(1)
IC= 2,5 A; VCE=5 V h
Collector-emitter saturation voltage
(1)
IC= 7,5 A; IB= 1,5 A V
Transition frequency at f = 100 MHz
(1)
−IE= 2,5 A; VCB= 28 V f
= 7,5 A; VCB= 28 V f
−I
E
Collector capacitance at f = 1 MHz
IE=Ie= 0; VCB=28V C
Feedback capacitance at f=1MHz
I
= 100 mA; VCE=28V C
C
Collector-flange capacitance C
(BR)CES
(BR)CEO
(BR)EBO
CES
SBO
SBR
h
FE
FE1/hFE2
CEsat
T
T
c
re
cf
> 65 V
> 36 V
> 4V
< 10 mA
> 8mJ
> 8mJ
typ. 45
10 to 80
< 1,2
typ. 1,5 V
typ. 570 MHz
typ. 570 MHz
typ. 82 pF
typ. 54 pF
typ. 2 pF
Note
1. Measured under pulse
conditions: t
≤ 200 µs; δ≤0,02.
p
Fig.4 Typical values;
VCE= 28 V.
August 1986 4
(A)
4
I
C
2
0
0.5
handbook, halfpage
Th = 70 °C
MGP632
25 °C
1
VBE (V)
1.5
Philips Semiconductors Product specification
HF/VHF power transistor BLW86
100
handbook, halfpage
h
FE
50
0
0 5 10 15
MGP633
VCE = 28 V
5 V
IC (A)
Fig.5 Typical values; Tj=25°C.
300
handbook, halfpage
C
c
(pF)
200
100
0
02040
Fig.6 IE =Ie= 0; f = 1 MHz; Tj=25°C.
MGP634
typ
VCB (V)
1000
handbook, full pagewidth
f
T
(MHz)
500
0
0510
VCB = 28 V
15 V
Fig.7 Typical values; f = 100 MHz; Tj=25°C.
−IE (A)
MGP635
15
August 1986 5
Loading...