Philips BLW85 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW85
HF/VHF power transistor
Product specification
March 1993
Philips Semiconductors Product specification
HF/VHF power transistor BLW85
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
Matched h
request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
groups are available on
FE
supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION V
= 25 °C
h
V
CE
f
MHz
P
L
W
G
dB
p
η
%
z
i
Ω
Z
L
Ω
d
dB
3
c.w. (class-B) 12,5 175 45 > 4,5 > 75 1,4 + j1,5 2,7−j1,3 −
s.s.b. (class-AB) 12,5 1,6−28 3−30 (P.E.P.) typ. 19,5 typ. 35 −−typ. −33
PIN CONFIGURATION
PINNING - SOT123
PIN DESCRIPTION
lfpage
1
4
c
handbook, halfpage
b
1 collector
2 emitter
3 base
4 emitter
MBB012
23
MSB057
e
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993 2
Philips Semiconductors Product specification
HF/VHF power transistor BLW85
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open-collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation up to (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
= 0)
CESM
CEO
EBO
C(AV)
CM
=25°CPrfmax. 105 W
mb
stg
j
max. 36 V
max. 16 V
max. 4 V
max. 9 A
max. 22 A
−65 to + 150 °C
max. 200 °C
CE
(V)
MGP612
2
120
handbook, halfpage
P
rf
(W)
100
80
60
40
20
0
0 50 100 150
Fig.3 R.F. power dissipation; VCE≤ 16,5 V; f ≥ 1 MHz.
10
handbook, halfpage
I
C
(A)
1
11010
Th = 70 °C
Tmb = 25 °C
Fig.2 D.C. SOAR.
V
THERMAL RESISTANCE
(dissipation = 30 W; T
=79°C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
short-time
operation
continuous
r.f. operation
derate by
0.58 W/K
continuous
d.c. operation
derate by 0.43 W/K
th j-mb(dc)
th j-mb(rf)
th mb-h
during mismatch
MGP613
Th (°C)
= 2,5 K/W
= 1,8 K/W
= 0,3 K/W
March 1993 3
Philips Semiconductors Product specification
HF/VHF power transistor BLW85
CHARACTERISTICS
T
=25°C
j
Collector-emitter breakdown voltage
V
= 0; IC= 50 mA V
BE
Collector-emitter breakdown voltage
open base; IC= 100 mA V
Emitter-base breakdown voltage
open collector; IE= 25 mA V
Collector cut-off current
V
= 0; VCE= 18 V I
BE
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
I
= 4 A; VCE=5 V h
C
D.C. current gain ratio of matched devices
(1)
(1)
IC= 4 A; VCE=5 V h
Collector-emitter saturation voltage
(1)
IC= 12,5 A; IB= 2,5 A V
Transition frequency at f = 100 MHz
(1)
−IE= 4 A; VCB= 12,5 V f
−I
= 12,5 A; VCB= 12,5 V f
E
Collector capacitance at f = 1 MHz
IE=Ie=0;VCB= 15 V C
Feedback capacitance at f = 1 MHz
IC= 200 mA; VCE= 15 V C
Collector-flange capacitance C
(BR) CES
(BR) CEO
(BR)EBO
CES
SBO
SBR
FE
FE1/hFE2
CEsat
T
T
c
re
cf
> 36 V
> 16 V
> 4V
< 25 mA
> 8mJ
> 8mJ
typ. 50
10 to 80
< 1,2
typ. 1,5 V
typ. 650 MHz
typ. 600 MHz
typ. 120 pF
typ. 82 pF
typ. 2 pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0,02.
p
March 1993 4
Philips Semiconductors Product specification
HF/VHF power transistor BLW85
100
handbook, halfpage
h
FE
75
50
25
0
0 5 10 15
typical values Tj = 25 °C
VCE = 12.5 V
5 V
Fig.4
IC (A)
MGP614
300
handbook, halfpage
C
c
(pF)
200
100
0
01020
MGP615
IE = Ie = 0
f = 1 MHz
typ
VCB (V)
Fig.5 Tj=25°C.
750
handbook, full pagewidth
f
T
(MHz)
500
250
0
0510
Fig.6
March 1993 5
VCB = 12.5 V
10 V
5 V
MGP616
typical values
f = 100 MHz
Tj = 25 °C
15
−IE (A)
20
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