Philips BLW83 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW83
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
DESCRIPTION
N-P-N silicon planar epitaxial
transistor for use in transmitting
amplifiers operating in the h.f. and
v.h.f. bands, with a nominal supply
Matched h
request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
groups are available on
FE
voltage of 28 V. The transistor is
specified for s.s.b. applications as
linear amplifier in class-A and AB.
The device is resistance stabilized
and is guaranteed to withstand
severe load mismatch conditions.
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION V
V
CE
f
MHz
P
W
L
G
p
dB
η
dt
%
I
C
A
d
dB
3
s.s.b. (class-A) 26 1,6 − 28 0 − 10 (P.E.P.) > 20 − 1,35 <−40 70
s.s.b. (class-AB) 28 1,6 − 28 3 − 30 (P.E.P.) typ. 21 typ. 40 typ. 1,34 typ. −30 25
PIN CONFIGURATION
PINNING - SOT123
PIN DESCRIPTION
lfpage
1
4
c
handbook, halfpage
b
1 collector
2 emitter
3 base
4 emitter
T
°C
h
MBB012
23
MSB057
e
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open-collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
= 0)
CESM
CEO
EBO
C(AV)
CM
=25°CP
mb
rf
stg
j
max. 65 V
max. 36 V
max. 4 V
max. 3 A
max. 9 A
max. 76 W
−65 to + 150 °C
max. 200 °C
10
handbook, halfpage
I
C
(A)
1
−1
10
11010
Th = 70 °C
VCE (V)
Fig.2 D.C. SOAR.
MGP586
Tmb = 25 °C
2
100
handbook, halfpage
P
rf
(W)
50
continuous
d.c. operation
derate by 0.32 W/K
0
0 50 100 150
Fig.3 R.F. power dissipation; VCE≤ 28 V; f ≥ 1 MHz.
THERMAL RESISTANCE
(dissipation = 35 W; T
=80°C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
short-time
operation
continuous
r.f. operation
derate by
0.42 W/K
during mismatch
th j-mb(dc)
th j-mb(rf)
th mb-h
MGP587
Th (°C)
= 3,15 K/W
= 2,35 K/W
= 0,3 K/W
August 1986 3
Philips Semiconductors Product specification
HF/VHF power transistor BLW83
CHARACTERISTICS
T
=25°C unless otherwise specified
j
Collector-emitter breakdown voltage
V
= 0; IC= 10 mA V
BE
Collector-emitter breakdown voltage
open base; IC= 50 mA V
Emitter-base breakdown voltage
open collector; IE= 10 mA V
Collector cut-off current
V
= 0; VCE= 36 V I
BE
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
= 1,25 A; VCE=5 V h
I
C
D.C. current gain ratio of matched devices
(1)
(1)
IC= 1,25 A; VCE=5 V h
Collector-emitter saturation voltage
(1)
IC= 3,75 A; IB= 0,75 A V
Transition frequency at f = 100 MHz
(1)
−IE= 1,25 A; VCB= 28 V f
−I
= 3,75 A; VCB= 28 V f
E
Collector capacitance at f = 1 MHz
I
=0;VCB= 28 V C
E=Ie
Feedback capacitance at f = 1 MHz
I
= 100 mA; VCE= 28 V C
C
Collector-flange capacitance C
(BR)CES
(BR)CEO
(BR)EBO
CES
SBO
SBR
FE
FE1/hFE2
CEsat
T
T
c
re
cf
> 65 V
> 36 V
> 4V
< 4mA
> 8mJ
> 8mJ
typ. 50
10 to 100
< 1,2
typ. 1,5 V
typ. 530 MHz
typ. 530 MHz
typ. 50 pF
typ. 31 pF
typ. 2 pF
Note
1. Measured under pulse conditions: t
Fig.4 Typical values; VCE= 28 V.
≤ 200 µs; δ≤0,02.
p
handbook, halfpage
I
C
(A)
3
2
1
0
012
August 1986 4
Th = 70 °C 25 °C
V
(V)
BE
MGP588
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