Philips BLW81 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW81
UHF power transistor
Product specification
March 1993
Philips Semiconductors Product specification
UHF power transistor BLW81
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION V
=25°C in an unneutralized common-emitter class-B circuit
h
CE
V
c.w. 12,5 470 10 > 6,0 > 60 1,3 + j2,5 150 − j66
c.w. 12,5 175 10 typ. 13,5 typ. 60 1,2 − j0,6 140 − j80
PIN CONFIGURATION
The transistor is housed in a
1
⁄4"
capstan envelope with a ceramic cap.
f
MHz
P
W
L
G
p
dB
η
%
z
i
Ω
PINNING - SOT122A.
Y
mS
L
PIN DESCRIPTION
1 collector
2 emitter
Top view
4
31
2
MBK187
3 base
4 emitter
handbook, halfpage
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993 2
Philips Semiconductors Product specification
UHF power transistor BLW81
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (d.c. or average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
=0)
CESM
CEO
EBO
C
CM
=25°CP
mb
tot
stg
j
max 36 V
max 17 V
max 4 V
max 2,5 A
max 7,5 A
max 40 W
−65 to +150 °C
max 200 °C
10
handbook, halfpage
I
C
(A)
Th = 70 °C
1
11010
THERMAL RESISTANCE
Fig.2
T
mb
= 25 °C
VCE (V)
MGP573
2
50
handbook, halfpage
P
rf
(W)
40
short time operation
during
mismatch
30
20
10
0
0 50 100
MGP574
r.f. power dissipation
VCE ≤ 16.5 V
f > 1 MHz
derate by
0.204 W/K
continuous operation
Th (°C)
Fig.3
From junction to mounting base R
From mounting base to heatsink R
March 1993 3
th j-mb
th mb-h
= 4,3 K/W
= 0,6 K/W
Philips Semiconductors Product specification
UHF power transistor BLW81
CHARACTERISTICS
T
=25°C
j
Breakdown voltages
Collector-emitter voltage
=0;IC=25mA V
V
BE
Collector-emitter voltage
open base; I
= 100 mA V
C
Emitter-base voltage
open collector; IE=10mA V
Collector cut-off current
= 0; VCE=17V I
V
BE
D.C. current gain
(1)
IC= 1,25 A; VCE=5V h
Collector-emitter saturation voltage
(1)
IC= 3,75 A; IB= 0,75 A V
Transition frequency at f = 500 MHz
(1)
IC= 1,25 A; VCE= 12,5 V f
I
= 3,75 A; VCE= 12,5 V f
C
Collector capacitance at f = 1 MHz
IE=Ie= 0; VCB= 12,5 V C
Feedback capacitance at f = 1 MHz
IC= 100 mA; VCE= 12,5 V C
Collector-stud capacitance
(BR)CES
(BR)CEO
(BR)EBO
CES
FE
CEsat
T
T
c
re
C
cs
> 36 V
> 17 V
> 4V
< 10 mA
> 10
typ 35
typ 0,75 V
typ 1,3 GHz
typ 0,9 GHz
typ 34 pF
typ 18 pF
typ 1,2 pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0,02.
p
March 1993 4
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