Philips BLW81 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW81

UHF power transistor

Product specification

March 1993

Philips Semiconductors Product specification

UHF power transistor BLW81

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

=25°C in an unneutralized common-emitter class-B circuit

h

CE

V

c.w. 12,5 470 10 > 6,0 > 60 1,3 + j2,5 150 − j66

c.w. 12,5 175 10 typ. 13,5 typ. 60 1,2 − j0,6 140 − j80

PIN CONFIGURATION

The transistor is housed in a

1

⁄4"

capstan envelope with a ceramic cap.

f

MHz

P

W

L

G

p

dB

η

%

z

i

Ω

PINNING - SOT122A.

Y

mS

L

PIN DESCRIPTION

1 collector
2 emitter

Top view

4

31

2

MBK187

3 base
4 emitter

handbook, halfpage

Fig.1 Simplified outline. SOT122A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

March 1993 2

Philips Semiconductors Product specification

UHF power transistor BLW81

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (d.c. or average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

=0)

CESM
CEO

EBO
C
CM

=25°CP

mb

tot

stg

j

max 36 V
max 17 V
max 4 V
max 2,5 A
max 7,5 A
max 40 W

−65 to +150 °C

max 200 °C

10

handbook, halfpage

I

C

(A)

Th = 70 °C

1

11010

THERMAL RESISTANCE

Fig.2

T

mb

= 25 °C

VCE (V)

MGP573

2

50

handbook, halfpage

P

rf

(W)

40

short time operation
during
mismatch

30

20

10

0

0 50 100

MGP574

r.f. power dissipation

VCE ≤ 16.5 V

f > 1 MHz

derate by

0.204 W/K

continuous operation

Th (°C)

Fig.3

From junction to mounting base R
From mounting base to heatsink R

March 1993 3

th j-mb
th mb-h

= 4,3 K/W
= 0,6 K/W

Philips Semiconductors Product specification

UHF power transistor BLW81

CHARACTERISTICS

T

=25°C

j

Breakdown voltages

Collector-emitter voltage

=0;IC=25mA V

V

BE

Collector-emitter voltage

open base; I

= 100 mA V

C

Emitter-base voltage

open collector; IE=10mA V

Collector cut-off current

= 0; VCE=17V I

V

BE

D.C. current gain

(1)

IC= 1,25 A; VCE=5V h

Collector-emitter saturation voltage

(1)

IC= 3,75 A; IB= 0,75 A V

Transition frequency at f = 500 MHz

(1)

IC= 1,25 A; VCE= 12,5 V f
I

= 3,75 A; VCE= 12,5 V f

C

Collector capacitance at f = 1 MHz

IE=Ie= 0; VCB= 12,5 V C

Feedback capacitance at f = 1 MHz

IC= 100 mA; VCE= 12,5 V C

Collector-stud capacitance

(BR)CES

(BR)CEO

(BR)EBO

CES

FE

CEsat

T
T

c

re

C

cs

> 36 V

> 17 V

> 4V

< 10 mA

> 10

typ 35

typ 0,75 V

typ 1,3 GHz
typ 0,9 GHz

typ 34 pF

typ 18 pF
typ 1,2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

March 1993 4