Philips BLW78 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW78
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
It has a
ceramic cap. All leads are isolated
from the flange.
1
⁄2" flange envelope with a
AB or B operated mobile, industrial
and military transmitters in the h.f.
and v.h.f. bands. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION V
=25°C
h
V
CE
I
I
C(ZS)
A
C
f
MHz
P
W
L
G
p
dB
η
%
d
3
dB
(1)
c.w. (class-B) 28 − 150 100 > 6 > 70 −
s.s.b. (class-A) 26 3 28 35 (P.E.P.) typ. 19,5 − typ. −40
s.s.b. (class-AB) 28 0,05 28 100 (P.E.P.) typ. 19,0 typ. 42 typ. −30
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
PIN CONFIGURATION
PINNING - SOT121B.
PIN DESCRIPTION
handbook, halfpage
43
1 collector
2 emitter
3 base
4 emitter
21
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
=0)
CESM
CEO
EBO
C(AV)
CM
=25°CP
mb
rf
stg
j
max. 70 V
max. 35 V
max. 4 V
max. 10 A
max. 25 A
max. 160 W
−65 to +150 °C
max. 200 °C
2
10
handbook, halfpage
I
C
(A)
10
1
11010
Th = 70 °CTmb = 25 °C
VCE (V)
Fig.2 D.C. SOAR.
MGP543
2
200
handbook, halfpage
P
rf
(W)
150
100
50
0 50 100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
ΙΙΙ
ΙΙ
0.61 W/K
Ι
derate by 0.79 W/K
derate by
Th (°C)
MGP544
Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation = 80 W; T
=86°C; i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
August 1986 3
th j-mb(dc)
th j-mb(rf)
th mb-h
= 1,45 K/W
= 1,06 K/W
= 0,2 K/W
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
CHARACTERISTICS
T
=25°C
j
Collector-emitter breakdown voltage
V
=0;IC=50mA V
BE
Collector-emitter breakdown voltage
open base; IC= 100 mA V
Emitter-base breakdown voltage
open collector; IE= 5 mA V
Collector cut-off current
VBE= 0; VCE=35V I
D.C. current gain
(1)
IC= 5 A; VCE=5V h
Collector-emitter saturation voltage
I
= 15 A; IB=3 A V
C
Transition frequency at f = 100 MHz
(2)
−IE= 5 A; VCB=28V f
−I
= 15 A; VCB=28V f
E
Collector capacitance at f = 1 MHz
I
= 0; VCB=28V C
E=Ie
Feedback capacitance at f=1MHz
I
= 100 mA; VCE=28V C
C
Collector-flange capacitance C
(BR)CES
(BR)CEO
(BR)EBO
CES
FE
CEsat
T
T
c
re
cf
> 70 V
> 35 V
> 4V
< 5mA
20 to 85
typ. 2 V
typ. 370 MHz
typ. 350 MHz
typ. 155 pF
typ. 102 pF
typ. 3 pF
Notes
1. Measured under pulse conditions: t
≤ 300 µs; δ≤0,02.
p
2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.
August 1986 4
Philips Semiconductors Product specification
HF/VHF power transistor BLW78
75
handbook, halfpage
h
FE
50
25
0
0510
Fig.4 Typical values; Tj=25°C.
750
handbook, full pagewidth
VCE = 28 V
5 V
IC (A)
MGP545
600
handbook, halfpage
C
c
(pF)
400
200
0
02040
Fig.5 IE=Ie= 0; f = 1 MHz; Tj=25°C.
MGP546
typ
VCB (V)
MGP547
f
T
(MHz)
500
250
0
0105 20
Fig.6 Typical values; f = 100 MHz; Tj=25°C.
August 1986 5
VCB = 28 V
15
20 V
−IE (A)
25
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