Philips blw76 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW76
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
HF/VHF power transistor BLW76
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-AB
or class-B operated high power
transmitters in the h.f. and v.h.f.
mismatch conditions. Transistors are
delivered in matched h
groups.
FE
The transistor has a1⁄2" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
bands. The transistor presents
excellent performance as a linear
amplifier in the h.f. band. It is
resistance stabilized and is
guaranteed to withstand severe load
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION V
s.s.b. (class-AB) 28 0,05 1,6 − 28 8 − 80 (P.E.P.) > 13 > 35
= 25 °C
h
V
CE
I
C(ZS)
A
f
MHz
P
W
L
G
p
dB
%
η
(1)
<−30
c.w. (class-B) 28 − 108 80 typ. 7,9 typ. 70 −
Note
1. At 80 W P.E.P.
d
dB
3
PIN CONFIGURATION
PINNING - SOT121B.
PIN DESCRIPTION
handbook, halfpage
43
1 collector
2 emitter
3 base
4 emitter
21
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
HF/VHF power transistor BLW76
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
= 0)
CESM
CEO
EBO
C(AV)
CM
= 25 °CP
mb
rf
stg
j
max. 70 V
max. 35 V
max. 4 V
max. 8 A
max. 20 A
max. 140 W
−65 to + 150 °C
max. 200 °C
10
handbook, halfpage
I
C
(A)
1
11010
Fig.2 D.C. SOAR.
MGP499
T
= 25 °CTh = 70 °C
mb
VCE (V)
2
200
handbook, halfpage
P
rf
(W)
150
100
50
0
0 50 100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
ΙΙΙ
ΙΙ
derate by 0.77 W/K
Ι
derate by 0.56 W/K
Th (°C)
MGP500
Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation = 60 W; T
=82°C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
August 1986 3
th j-mb(dc)
th j-mb(rf)
th mb-h
= 1,92 K/W
= 1,33 K/W
= 0,2 K/W
Philips Semiconductors Product specification
HF/VHF power transistor BLW76
CHARACTERISTICS
T
=25°C unless otherwise specified
j
Collector-emitter breakdown voltage
V
= 0; IC= 50 mA V
BE
Collector-emitter breakdown voltage
open base; IC= 50 mA V
Emitter-base breakdown voltage
open collector; IE= 10 mA V
Collector cut-off current
VBE= 0; VCE= 35 V I
D.C. current gain
(1)
IC= 4 A; VCE=5 V h
D.C. current grain ratio of matched devices
(1)
IC= 4 A; VCE=5 V h
Collector-emitter saturation voltage
(1)
IC= 12,5 A; IB= 2,5 A V
Transition frequency at f = 100 MHz
(2)
−IE= 4 A; VCB= 28 V f
−I
= 12,5 A; VCB= 28 V f
E
Collector capacitance at f = 1 MHz
I
= 0; VCB= 28 V C
E=Ie
Feedback capacitance at f = 1 MHz
IC= 50 mA; VCE= 28 V C
Collector-flange capacitance C
(BR) CES
(BR) CEO
(BR)EBO
CES
FE
FE1/hFE2
CEsat
T
T
c
re
cf
> 70 V
> 35 V
> 4V
< 10 mA
15 to 80
< 1,2
typ. 2,5 V
typ. 315 MHz
typ. 305 MHz
typ. 125 pF
typ. 85 pF
typ. 3 pF
Notes
1. Measured under pulse conditions: t
≤ 300 µs; δ≤0,02.
p
2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.
10
handbook, halfpage
I
C
(A)
1
−1
10
−2
10
Fig.4 Typical values; VCE= 20 V.
August 1986 4
Th = 70 °C 25 °C
VBE (V)
MGP501
20.5 1 1.5
Philips Semiconductors Product specification
HF/VHF power transistor BLW76
60
handbook, halfpage
h
FE
40
20
0
01020
VCE = 28 V
5 V
IC (A)
Fig.5 Typical values; Tj=25°C.
MGP502
600
handbook, halfpage
C
c
(pF)
400
200
0
02040
Fig.6 IE=Ie= 0; f = 1 MHz; Tj= 25 °C.
MGP503
typ
VCB (V)
600
handbook, full pagewidth
f
T
(MHz)
400
typ
200
0
05 15
Fig.7 VCB= 28 V; f = 100 MHz; Tj=25°C.
August 1986 5
MGP504
10
−IE (A)
20
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