Philips BLW60C Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW60C
VHF power transistor
Product specification
March 1993
Philips Semiconductors Product specification
VHF power transistor BLW60C
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a
Matched h
request.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
groups are available on
FE
nominal supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION
=25°C
h
V
CC
VfMHz
P
W
L
G
L
dB
%
η
z
i
Ω
Z
L
Ω
d
dB
3
c.w. (class-B) 12,5 175 45 > 5,0 > 75 1,2 + j1,4 2,6 − j1,2 −
s.s.b. (class-AB) 12,5 1,6-28 3-30 (P.E.P.) typ. 19,5 typ. 35 −−typ. −33
PIN CONFIGURATION
PINNING - SOT120A.
PIN DESCRIPTION
handbook, halfpage
4
1 collector
2 emitter
3 base
31
4 emitter
2
MSB056
Fig.1 Simplified outline. SOT120A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993 2
Philips Semiconductors Product specification
VHF power transistor BLW60C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
=0)
CESM
CEO
EBO
C(AV)
CM
= 25 °CP
mb
rf
stg
j
max. 36 V
max. 16 V
max. 4 V
max. 9 A
max. 22 A
max. 100 W
−65 to+ 150 °C
max. 200 °C
CE
(V)
MGP479
2
150
handbook, halfpage
P
rf
(W)
100
50
0
0
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; VCE≤ 16,5 V; f > MHz.
2
10
handbook, halfpage
I
C
(A)
10
1
11010
Th = 70 °C
Fig.2 D.C. SOAR.
Tmb = 25 °C
V
THERMAL RESISTANCE
(dissipation = 40 W; T
=88°C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
ΙΙΙ
ΙΙ
Ι
50
th j-mb(dc)
th j-mb(rf)
th mb-h
derate by 0.52 W/K
0.38 W/K
Th (°C)
= 2,8 K/W
= 2,05 K/W
= 0,45 K/W
MGP480
100
March 1993 3
Philips Semiconductors Product specification
VHF power transistor BLW60C
CHARACTERISTICS
T
=25°C
j
Breakdown voltage
Collector-emitter voltage
=0;IC=50mA V
V
BE
(BR)CES
Collector-emitter voltage
open base; I
= 100 mA V
C
(BR)CEO
Emitter-base voltage
open collector; IE=25mA V
(BR)EBO
Collector cut-off current
=0;VCE=15V I
V
BE
CES
Transient energy
L = 25 mH; f = 50 Hz
open base E > 8ms
−VBE= 1,5 V; RBE=33Ω E > 8ms
D.C. current gain
IC= 4 A; VCE=5V h
D.C. current gain ratio of matched devices
IC= 4 A; VCE=5V h
Collector-emitter saturation voltage
IC= 12,5 A; IB= 2,5 A V
Transition frequency at f = 100 MHz
IC= 4 A; VCE= 12,5 V f
I
= 12,5 A; VCE= 12,5 V f
C
(1)
FE
(1)
FE1/hFE2
(1)
CEsat
(1)
T
T
Collector capacitance at f = 1 MHz
= 0; VCB=15V C
I
E=Ie
c
> 36 V
> 16 V
> 4V
< 25 mA
typ 50
10 to 80
< 1,2
typ 1,5 V
typ 650 MHz
typ 600 MHz
typ 120 pF
< 160 pF
Feedback capacitance at f = 1 MHz
I
= 200 mA; VCE=15V C
C
Collector-stud capacitance
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0,02.
p
March 1993 4
re
C
cs
typ 80 pF
typ 2 pF
Philips Semiconductors Product specification
VHF power transistor BLW60C
75
handbook, halfpage
h
FE
50
25
0
0 5 10 15
typical values Tj = 25 °C
VCE = 12.5 V
5 V
MGP481
IC (A)
Fig.4 DC current gain as a function of collector
current.
300
handbook, halfpage
C
c
(pF)
200
100
0
01020
typ
IE = Ie = 0
f = 1 MHz
VCB (V)
Fig.5 Collector capacitance as a function of
collector-base voltage.
MGP482
750
handbook, full pagewidth
f
T
(MHz)
500
250
0
0510
VCE = 12.5 V
10 V
5 V
15
Fig.6 Transition frequency as a function of collector current.
typical values
f = 100 MHz
Tj = 25 °C
IC (A)
MGP483
20
March 1993 5
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