Philips BLW50F Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW50F

HF/VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

DESCRIPTION

N-P-N silicon planar epitaxial
transistor primarily intended for use in

It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.

class-A, AB and B operated, industrial
and military transmitters in the h.f.
and v.h.f. band. Resistance
stabilization provides protection
against device damage at severe load
mismatch conditions. Matched
hFEgroups are available on request.

QUICK REFERENCE DATA

R.F. performance

MODE OF OPERATION V

CE

V

f

MHz

P

W

L

G

p

dB

η

dt

%

I

I

C

C(ZS)

A

mA

d

dB

3

s.s.b. (class-A) 45 1,6 - 28 0 - 16 (P.E.P.) > 19,5 − 1,2 −<−40 70

(1)

s.s.b. (class-AB) 50 1,6 - 28 10 - 65 (P.E.P.) typ. 18 typ. 45

1,45 50 typ. −30 25

Note

1. At 65W P.E.P.

T
°C

h

PIN CONFIGURATION

PINNING - SOT123

PIN DESCRIPTION

lfpage

1

23

4

handbook, halfpage

MSB057

MBB012

c

b

e

1 collector
2 emitter
3 base
4 emitter

Fig.1 Simplified outline and symbol.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
D.C. and r.f. (f > 1 MHz) power dissipation; T
Storage temperature T
Operating junction temperature T

BE

= 0)

CESM
CEO

EBO
C(AV)
CM

= 25 °CP

mb

tot;Prf

stg

j

max. 110 V
max. 55 V
max. 4 V
max. 2,5 A
max. 7,5 A
max. 94 W

−65 to + 150 °C

max. 200 °C

10

handbook, halfpage

I

C

(A)

1

−1

10

1 10 10

Th = 70 °C

VCE (V)

Fig.2 D.C. SOAR.

MGP466

Tmb = 25 °C

150

handbook, halfpage

P

rf

(W)

100

ΙΙ

50

Ι

2

0

0

I Continuous d.c. and r.f. operation
II Short-time operation during mismatch

50

Th (°C)

MGP467

100

Fig.3 Power derating curves vs. temperature.

THERMAL RESISTANCE

(dissipation = 54 W; T

=86°C, i.e. Th=70°C)

mb

From junction to mounting base

(d.c. and r.f. dissipation) R

From mounting base to heatsink R

August 1986 3

th j-mb
th mb-h

= 2,1 K/W
= 0,3 K/W

Philips Semiconductors Product specification

HF/VHF power transistor BLW50F

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

V

= 0; IC= 25 mA V

BE

Collector-emitter breakdown voltage

open base; IC= 100 mA V

Emitter-base breakdown voltage

open collector; IE= 10 mA V

Collector cut-off current

VBE= 0; VCE= 55 V I

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

(1)

IC= 1,2 A; VCE=5 V h

D.C. current gain ratio of matched devices

(1)

IC= 1,2 A; VCE=5 V h
Collector-emitter saturation voltage

(1)

IC= 3,0 A; IB= 0,6 A V

Transition frequency at f = 100 MHz

(1)

−IE= 1,2 A; VCB= 45 V f
= 4,0 A; VCB= 45 V f

−I

E

Collector capacitance at f = 1 MHz

IE=Ie= 0; VCB= 45 V C

Feedback capacitance at f = 1 MHz

I

= 50 mA; VCE= 45 V C

C

Collector-flange capacitance C

(BR) CES

(BR) CEO

(BR)EBO

CES

SBO
SBR

FE

FE1/hFE2

CEsat

T
T

c

re
cf

> 110 V

> 55 V

> 4V

< 10 mA

> 8mJ
> 8mJ

typ. 25

15 to 100

< 1,2

typ. 1,2 V

typ. 490 MHz
typ. 540 MHz

typ. 53 pF

typ. 35 pF
typ. 2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

August 1986 4