Philips BLW32 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLW32

UHF linear power transistor

Product specification

August 1986

Philips Semiconductors Product specification

UHF linear power transistor BLW32

DESCRIPTION

N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The

excellent d.c. dissipation
properties for class-A operation are

area. The combination of optimum
thermal design and the application of

gold sandwich metallization

realizes excellent reliability
properties.

1

The transistor has a

⁄4" capstan

envelope with ceramic cap.
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal

QUICK REFERENCE DATA

R.F. performance

MODE OF OPERATION f

vision

MHz

V

CE

V

I

C

mA

T
°C

h

(1)

d

im

P

dB

o sync

W

(1)

G
dB

p

class-A; linear amplifier 860 25 150 70 −60 > 0,5 > 11

860 25 150 25 −60 typ. 0,63 typ. 12,2

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to

peak sync level.

PIN CONFIGURATION

PINNING - SOT122A.

PIN DESCRIPTION

1 collector
2 emitter

Top view

4

31

2

MBK187

3 base
4 emitter

handbook, halfpage

Fig.1 Simplified outline. SOT122A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

UHF linear power transistor BLW32

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage

(peak value); V

open base V
Emitter-base voltage (open collector) V
Collector current

d.c. or average I

(peak value); f > 1 MHz I
Total power dissipation up to T
Storage temperature T
Operating junction temperature T

=0 V

BE

=25°CP

mb

CESM
CEO
EBO

C
CM

tot
stg
j

max. 50 V
max. 30 V
max. 4 V

max. 650 mA
max. 1000 mA
max. 10,8 W

−65 to +150 °C

max. 200 °C

handbook, halfpage

1

I

C

(A)

−1

10

1 10 10

(1) Second breakdown limit (independent of temperature).

Th = 70 °C

Tmb = 25 °C

(1)

VCE (V)

Fig.2 D.C. SOAR.

THERMAL RESISTANCE (see Fig.4)

MGP429

15

handbook, halfpage

P

tot

(W)

10

5

2

0

0

50

Th (°C)

MGP430

100

Fig.3 Power derating curve vs. temperature.

From junction to mounting base

(dissipation = 3,75 W; Tmb= 72,3 °C; i.e. Th=70°C) R
From mounting base to heatsink R

August 1986 3

th j-mb
th mb-h

= 15,0 K/W
= 0,6 K/W

Philips Semiconductors Product specification

UHF linear power transistor BLW32

20

handbook, full pagewidth

R

th j-h

(K/W)

15

10

0

Th = 125 °C

100 °C

75 °C

100 °C

75 °C

125 °C

150 °C

50 °C

105

175 °C

Tj = 200 °C

P

(W)

tot

25 °C

MGP431

0 °C

Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink

and junction temperature as parameters. (R

th mb-h

= 0,6 K/W.)

15

Example

Nominal class-A operation: V

Fig.4 shows: R

Typical device: R

T

T

th j-h

j

th j-h

j

= 25 V; IC= 150 mA; Th=70°C.

CE

max. 15,6 K/W
max. 130 °C
typ. 13,5 K/W
typ. 120 °C

August 1986 4