Philips BLW29 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLW29
VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
VHF power transistor BLW29
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B or C operated mobile transmitters
with a nominal supply voltage of
13,5 V. Because of the high gain and
excellent power handling capability,
the transistor is especially suited for
design of wide-band and
semi-wide-band v.h.f. amplifiers.
the chain can deliver 15 W with a
maximum drive power of 120 mW at
175 MHz. The transistor is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions with a supply over-voltage
to 16,5 V.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
Together with a BFQ42 driver stage,
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION V
= 25 °C
h
V
CE
f
MHz
P
W
L
G
p
dB
%
η
z
i
Ω
Y
mS
c.w. class-B 13,5 175 15 > 10 > 60 1,3 + j0,68 180 − j54
c.w. class-B 12,5 175 15 typ. 10, 5 typ. 67 −−
PIN CONFIGURATION
PINNING - SOT120
PIN DESCRIPTION
alfpage
4
1 collector
2 emitter
3 base
31
handbook, halfpage
b
c
4 emitter
L
MBB012
2
MSB056
e
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
VHF power transistor BLW29
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
= 0)
CESM
CEO
EBO
C(AV)
CM
= 25 °CP
mb
rf
stg
j
max. 36 V
max. 18 V
max. 4 V
max. 2,75 A
max. 8 A
max. 53 W
−65 to + 150 °C
max. 200 °C
10
handbook, halfpage
I
C
(A)
1
−1
10
11010
Th = 70 °C
Tmb = 25 °C
VCE (V)
MGP414
2
60
handbook, halfpage
P
rf
(W)
40
20
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 15 W; T
=77°C, i.e. Th= 70 °C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
MGP415
short-time
operation
during mismatch
continuous
r.f. operation
derate by
continuous
d.c. operation
derate by 0.25 W/K
0
0 50 100
0.3 W/K
Th (°C)
Fig.3 R.F. power dissipation;
VCE≤ 16,5 V; f ≥ 1 MHz.
th j-mb(dc)
th j-mb(rf)
th mb-h
= 3,7 K/W
= 3,05 K/W
= 0,45 K/W
August 1986 3
Philips Semiconductors Product specification
VHF power transistor BLW29
CHARACTERISTICS
T
=25°C
j
Collector-emitter breakdown voltage
V
= 0; IC= 15 mA V
BE
Collector-emitter breakdown voltage
open base; IC= 100 mA V
Emitter-base breakdown voltage
open collector; IE= 5 mA V
Collector cut-off current
VBE= 0; VCE= 18 V I
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
(1)
IC= 1,75 A; VCE=5 V h
Collector-emitter saturation voltage
(1)
IC= 5 A; IB=1 A V
Transition frequency at f = 100 MHz
(1)
−IE= 1,75 A; VCB= 13,5 V f
−I
= 5 A; VCB= 13,5 V f
E
Collector capacitance at f = 1 MHz
IE=Ie=0;VCB= 13,5 V C
Feedback capacitance at f = 1 MHz
IC= 100 mA; VCE= 13,5 V C
Collector-stud capacitance C
(BR) CES
(BR)CEO
(BR)EBO
CES
SBO
SBR
FE
CEsat
T
T
c
re
cs
> 36 V
> 18 V
> 4V
< 5mA
> 4mJ
> 4mJ
typ. 40
10 to 80
typ. 1,5 V
typ. 900 MHz
typ. 825 MHz
typ. 43 pF
typ. 27 pF
typ. 2 pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0,02.
p
August 1986 4
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