Philips BLV99-SL, BLV99 Datasheet
DATA SH EET
Product specification
September 1991
DISCRETE SEMICONDUCTORS
BLV99/SL
UHF power transistor
September 1991 2
Philips Semiconductors Product specification
UHF power transistor BLV99/SL
FEATURES
• Emitter-ballasting resistors for an
optimum temperature profile
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT172D
envelope with a ceramic cap. It is
designed primarily for use as a driver
stage in base stations in the 900 MHz
communications band. All leads are
isolated from the mounting base.
PINNING - SOT172D
PIN DESCRIPTION
1 emitter
2 base
3 collector
4 emitter
PIN CONFIGURATION
QUICK REFERENCE DATA
RF performance at T
mb
= 25 °C in a common emitter class-B test circuit.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
c
(%)
c.w. narrow band 900 24 2 > 8 > 55
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
2
1
4
3
MSB007
Top view
September 1991 3
Philips Semiconductors Product specification
UHF power transistor BLV99/SL
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base − 27 V
V
EBO
emitter-base voltage open collector − 3.5 V
I
C
collector current DC value − 200 mA
I
CM
collector current peak value
f > 1 MHz
− 600 mA
P
tot
total power dissipation f > 1 MHz;
Tmb=50°C
− 6W
T
stg
storage temperature range −65 150 °C
T
j
junction operating temperature − 200 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb(RF)
from junction to mounting base PL= 4.5 W; Tmb=25°C 20 K/W
Fig.2 Power/temperature derating curves.
(I) Continuous RF operation.
(II) Short time operation during mismatch.
handbook, halfpage
0 40 80 160
Th (°C)
P
tot
(W)
12
0
4
8
120
MBK466
Ι
ΙΙ
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