Philips BLV98CE Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV98CE

UHF power transistor

Product specification

March 1993

Philips Semiconductors Product specification

UHF power transistor BLV98CE

FEATURES

• Internal input matching to achieve high power gain

• Implanted ballasting resistors an for optimum

temperature profile

• Gold metallization ensures excellent reliability

QUICK REFERENCE DATA

RF performance up to T

=25°C in a common emitter class-AB circuit.

h

MODE OF OPERATION f (MHz) V

c.w. class-AB 960 24 15 > 7.5 > 50

PINNING - SOT171A

PIN SYMBOL DESCRIPTION

1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter

DESCRIPTION

NPN silicon planar epitaxial transistor in an SOT-171
envelope, intended for common emitter, class-AB
operation in radio transmitters for the 960 MHz
communications band. The transistor has a 6-lead flange
envelope, with a ceramic cap. All leads are isolated from
the flange.

(V) PL(W) GP(dB) ηc(%)

CE

handbook, halfpage

Top view

12345

6

b

MAM141

c

e

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

March 1993 2

Philips Semiconductors Product specification

UHF power transistor BLV98CE

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

tot

T

stg

T

j

THERMAL RESISTANCE

collector base voltage open emitter − 50 V
collector emitter voltage open base − 27 V
emitter base voltage open collector − 3.5 V
collector current DC or average − 1.5 A
collector current peak value

− 4.5 A

f > 1 MHz

total power dissipation f > 1 MHz

− 40 W

Tmb=25°C
storage temperature −65 150 °C
operating junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

thj-mb

R

th mb-h

10

handbook, halfpage

I

C

(A)

1

−1

10

from junction to mounting base (RF) − 4.4 K/W
from mounting base to heatsink − 0.4 K/W

MDA449

Tmb = 25 °C

Th = 70 °C

110

V

(V)

CE

2

10

60

handbook, halfpage

P

tot

(W)

40

20

0

0

(1) DC or RF operation
(2) short-term operation during mismatch

40

(2)

(1)

80 160120

MDA450

Th (°C)

Fig.2 DC SOAR.

March 1993 3

Fig.3 Power/temperature derating.

Philips Semiconductors Product specification

UHF power transistor BLV98CE

CHARACTERISTICS

at T

=25°C unless otherwise stated.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

C

cf

collector-base breakdown voltage open emitter

IC= 25 mA

collector-emitter breakdown voltage open base

IC= 50 mA

emitter-base breakdown voltage open collector

IE= 5 mA

collector leakage current VBE=0

VCE= 27 V

DC current gain IC=1 A

VCE= 20 V

collector capacitance at f = 1 MHz IE=Ie=0

VCB= 24 V

feedback capacitance at f = 1 MHz IC=0

VCE= 24 V

collector-flange capacitance − 2 − pF

50 −−V

27 −−V

3.5 −−V

−− 5mA

15 −−

− 23 − pF

− 14 − pF

100

handbook, halfpage

h

FE

V

CE

80

60

40

20

0

012

= 24 V

20 V

MDA451

3

IC (A)

Fig.4 DC current gain as a function of collector

current; typical values.

100

handbook, halfpage

C

c

(pF)

80

60

40

20

4

0

010

20 30

MDA452

V

(V)

CB

Fig.5 Output capacitance as a function of VCB;

typical values.

March 1993 4