Philips BLV958FL, BLV958-P, BLV958 Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 Oct 15
2000 Jan 12
DISCRETE SEMICONDUCTORS
BLV958; BLV958FL
UHF power transistors
2000 Jan 12 2
Philips Semiconductors Product specification
UHF power transistors BLV958; BLV958FL
FEATURES
• Internal input and output matching for easy matching,
high gain and efficiency
• Poly-silicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Base stations in the 800 to 960 MHz frequency range.
DESCRIPTION
NPN silicon planar epitaxial transistors primarily intended
for common emitter class-AB operation. The transistors
have internalinput and output matching by means of MOS
capacitors. The encapsulations are a 2-lead rectangular
SOT391A flange package and a SOT391B flangeless
package, both with a ceramic cap.
PINNING - SOT391A PINNING - SOT391B
PIN SYMBOL DESCRIPTION
1 c collector
2 b base
3 e emitter; connected to flange
Fig.1 Simplified outline (SOT391A) and symbol.
handbook, halfpage
MAM203
1
2
3
Top view
e
c
b
PIN SYMBOL DESCRIPTION
1 c collector
2 b base
Ground plane e emitter
Fig.2 Simplified outline (SOT391B) and symbol.
handbook, halfpage
MSA465
1
2
Top view
e
c
b
QUICK REFERENCE DATA
RF performance at Th=25°C in a common emitter test circuit.
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
CW, class-AB
900 26 75 ≥8 ≥50
960 26 75 ≥8.5 ≥50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. Afteruse, dispose of as chemical or special wasteaccording to the regulations applying at the locationof
the user. It must never be thrown out with the general or domestic waste.
2000 Jan 12 3
Philips Semiconductors Product specification
UHF power transistors BLV958; BLV958FL
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under specified RF operating conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 70 V
V
CEO
collector-emitter voltage open base − 30 V
V
EBO
emitter-base voltage open collector − 3V
I
C
collector current (DC) − 15 A
I
C(AV)
average collector current − 15 A
P
tot
total power dissipation Tmb≤ 25 °C − 250 W
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
thermal resistance from junction to
mounting base
P
tot
= 250 W; Tmb=25°C;
note 1
0.7 K/W
R
th mb-h
thermal resistance from mounting base
to heatsink
0.2 K/W
2000 Jan 12 4
Philips Semiconductors Product specification
UHF power transistors BLV958; BLV958FL
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Notes
1. Measured under pulsed conditions: t
p
≤ 500 µs; δ≤0.01.
2. Value of Ccis that of the die only, it is not measurable because of internal matching network.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage open emitter; IC=60mA 70 −−V
V
(BR)CEO
collector-emitter breakdown voltage open base; IC= 150 mA 30 −−V
V
(BR)EBO
emitter-base breakdown voltage open collector; IE= 3 mA 3 −−V
I
CES
collector leakage current VBE= 0; VCE=28V −−5mA
h
FE
DC current gain VCE=10V; IC= 4.5 A; note 1;
see Fig 3
30 − 120
C
c
collector capacitance VCB=26V; IE=ie=0;
f = 1 MHz; note 2; see Fig 4
− 75 − pF
Fig.3 DC current gain as a function of collector
current; typical values.
Measured under pulsed conditions; tp≤ 500 µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.
handbook, halfpage
0
80
40
120
04 81216
h
FE
IC(A)
MLD243
(2)
(1)
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
Value Cc is that of the die only, it is not measurable because of
internal matching network.
I
E=ie
= 0; f = 1 MHz.
handbook, halfpage
0
100
150
(pF)
50
200
010203040
C
c
V (V)
CB
MLD244
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