Philips BLV958FL, BLV958 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV958; BLV958FL

UHF power transistors

Product specification
Supersedes data of 1996 Feb 12

1997 Oct 15

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

FEATURES

• Internal input and output matching for easy matching,
high gain and efficiency

• Poly-silicon emitter ballasting resistors for an optimum
temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Base stations in the 800 to 960 MHz frequency range.

PINNING - SOT391A

PIN SYMBOL DESCRIPTION

1 c collector
2 b base
3 e emitter; connected to flange

handbook, halfpage

Top view

1

b

3

2

MAM203

c

e

DESCRIPTION

NPN silicon planar epitaxial transistors primarily intended
for common emitter class-AB operation. The transistors
have internal input and output matching by means of MOS
capacitors. The encapsulations are a 2-lead rectangular
SOT391A flange package and a SOT391B flangeless
package, both with a ceramic cap.

PINNING - SOT391B

PIN SYMBOL DESCRIPTION

1 c collector
2 b base

Ground plane e emitter

handbook, halfpage

1

2

Top view

b

MSA465

c

e

Fig.1 Simplified outline (SOT391A) and symbol.

Fig.2 Simplified outline (SOT391B) and symbol.

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

CW, class-AB

=25°C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

900 26 75 ≥8 ≥50
960 26 75 ≥8.5 ≥50

P

(W)

L

G

p

(dB)

η

(%)

C

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Oct 15 2

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 15 A
average collector current − 15 A
total power dissipation Tmb≤ 25 °C − 250 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

thermal resistance from junction to
mounting base

thermal resistance from mounting base

P

= 250 W; Tmb=25°C;

tot

note 1

0.7 K/W

0.2 K/W

to heatsink

Note

1. Thermal resistance is determined under specified RF operating conditions.

1997 Oct 15 3

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

Notes

1. Measured under pulsed conditions: t

2. Value of Ccis that of the die only, it is not measurable because of internal matching network.

collector-base breakdown voltage open emitter; IC=60mA 70 −−V
collector-emitter breakdown voltage open base; IC= 150 mA 30 −−V
emitter-base breakdown voltage open collector; IE= 3 mA 3 −−V
collector leakage current VBE= 0; VCE=28V −−5mA
DC current gain

V

=10V; IC= 4.5 A; note 1;

CE

30 − 120

see Fig 3

collector capacitance

=26V; IE=ie=0;

V

CB

− 75 − pF

f = 1 MHz; note 2; see Fig 4

≤ 500 µs; δ≤0.01.

p

120

handbook, halfpage

h

FE

80

40

0

04 81216

Measured under pulsed conditions; tp≤ 500µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.

(1)

(2)

MLD243

IC(A)

Fig.3 DC current gain as a function of collector

current; typical values.

200

handbook, halfpage

C

c

(pF)

150

100

50

0

010203040

Value Cc is that of the die only, it is not measurable because of
internal matching network.

= 0; f = 1 MHz.

I

E=ie

V (V)

CB

Fig.4 Collector capacitance as a function of

collector-base voltage; typical values.

MLD244

1997 Oct 15 4

Philips Semiconductors Product specification

UHF power transistors BLV958; BLV958FL

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter, class-AB test circuit; R

h

th mb-h

= 0.2 K/W.

MODE OF OPERATION

CW, class-AB

f

(MHz)

900 26 200 75 ≥8

960 26 200 75 ≥8.5

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

≥50

typ. 9.5

typ. 55

≥50

typ. 9.5

typ. 55

Ruggedness in class-AB operation

The transistors are capable of withstanding a load mismatch corresponding to VSWR = 4 : 1 through all phases at rated
output power, under the following conditions: V

12

handbook, halfpage

G

G

(dB)

p

8

4

p

η

C

= 26 V; f = 960 MHz; ICQ= 200 mA; Th=25°C; R

CE

MLD245

60

(%)

40

20

η

C

120

handbook, halfpage

P

L

(W)

80

40

th mb-h

= 0.2 K/W.

MLD246

0

0 20 40 60 80 100

VCE= 26 V; ICQ= 200 mA; f = 960 MHz.

P (W)

0

L

Fig.5 Power gain and collector efficiency as

functions of load power; typical values.

1997 Oct 15 5

0

048 1612

VCE= 26 V; ICQ= 200 mA; f = 960 MHz.

P (W)

i

Fig.6 Load power as a function of input power;

typical values.