Philips BLV946 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV946
UHF power transistor
Product specification
Supersedes data of 1995 Jun 29
1997 Oct 30
Philips Semiconductors Product specification
UHF power transistor BLV946
FEATURES
• Internal input and output matching for easy matching,
high gain and efficiency
• Poly-silicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Base stations in the 850 to 960 MHz frequency range.
DESCRIPTION
NPN silicon planar transistor intended for common emitter
class-AB operation. The transistor has internal input and
output matching by means of MOS capacitors.
The encapsulation is a SOT273A flange envelope with a
ceramic cap. All leads are isolated from the flange.
PINNING - SOT273A
PIN DESCRIPTION
1 emitter
2 emitter
3 collector
4 base
5 emitter
6 emitter
handbook, halfpage
12345
Top view
Fig.1 Simplified outline and symbol.
6
MBK131
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common emitter test circuit.
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-AB 960 26 40 ≥9 ≥55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Oct 30 2
Philips Semiconductors Product specification
UHF power transistor BLV946
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 6A
average collector current − 6A
total power dissipation up to Tmb=25°C − 90 W
storage temperature range −65 +150 °C
operating junction temperature − +200 °C
thermal resistance from junction to
P
= 90 W; Tmb=25°C 1.94 K/W
tot
mounting base
thermal resistance from mounting
0.3 K/W
base to heatsink
10
handbook, halfpage
I
C
(A)
1
11010
(1) Tmb=25°C.
(2) Th=70°C.
(2)
Fig.2 DC SOAR.
(1)
VCE(V)
MLD231
120
handbook, halfpage
P
tot
(W)
80
40
2
0
040
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2)
(1)
80 120 160
MLD232
o
T ( C)
h
Fig.3 Power derating curve.
1997 Oct 30 3
Philips Semiconductors Product specification
UHF power transistor BLV946
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
Notes
1. Measured under pulsed conditions: t
2. CC value is that of the die only; it is not measurable because of internal matching network.
collector-base breakdown voltage open emitter; IC=30mA 70 −−V
collector-emitter breakdown voltage open base; IC=60mA 30 −−V
emitter-base breakdown voltage open collector; IE= 1.2 mA 3 −−V
collector leakage current VBE= 0; VCE=28V −−3mA
DC current gain VCE=10V; IC= 2 A; note 1 30 − 120
collector capacitance VCB=26V; IE=ie=0;
− 33 − pF
f = 1 MHz; note 2
≤ 500 µs; δ≤0.01.
p
100
handbook, halfpage
h
FE
80
60
40
20
0
0123456
Measured under pulsed conditions; tp≤ 500 µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.
(1)
(2)
MLD233
IC(A)
Fig.4 DC current gain as a function of collector
current; typical values.
1997 Oct 30 4
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