Philips BLV935 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV935
UHF power transistor
Product specification
1995 Jun 29
Philips Semiconductors Product specification
UHF power transistor BLV935
FEATURES
• Emitter ballasting resistors for an optimum temperature
profile
• Gold metallization ensures excellent reliability
• Internal input matching to achieve high power gain and
easy design of wideband circuits.
APPLICATIONS
• Base stations in the 820 to 980 MHz range.
PINNING - SOT273
PIN SYMBOL DESCRIPTION
1 e emitter
2 e emitter
3 c collector
4 b base
5 e emitter
6 e emitter
DESCRIPTION
NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor has
internal input matching by means of MOS capacitors and
is encapsulated in a 6-lead SOT273 flange envelope with
a ceramic cap. All leads are isolated from the flange.
handbook, halfpage
1
3
5
Top view
2
4
b
6
c
e
MAM033
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common emitter test circuit.
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-AB 960 26 30 ≥ 9 ≥ 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1995 Jun 29 2
Philips Semiconductors Product specification
UHF power transistor BLV935
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 4A
average collector current − 4A
total power dissipation up to Tmb=25°C − 70 W
storage temperature −65 +150 °C
operating junction temperature − +200 °C
thermal resistance from junction to
P
= 70 W; Tmb=25°C 2.5 K/W
tot
mounting base
thermal resistance from mounting
0.3 K/W
base to heatsink
10
handbook, halfpage
I
C
(A)
1
1
10
11010
(1) Tmb=25°C.
(2) Th=70°C.
(2)
Fig.2 DC SOAR.
(1)
VCE(V)
MLD140
100
handbook, halfpage
P
tot
(W)
80
60
40
20
2
0
0 40 80 120 160
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2)
(1)
MLD141
o
T ( C)
h
Fig.3 Power derating curves.
1995 Jun 29 3
Philips Semiconductors Product specification
UHF power transistor BLV935
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
Notes
1. Measured under pulsed conditions: t
2. CC value is that of the die only; it is not measurable because of internal matching network.
collector-base breakdown
open emitter; IC=20mA 70 −−V
voltage
collector-emitter breakdown
open base; IC=50mA 30 −−V
voltage
emitter-base breakdown
open collector; IE=1mA 3 −−V
voltage
collector leakage current VBE= 0; VCE=28V −−2mA
DC current gain VCE= 10 V; IC= 1.5 A; note 1 30 − 120
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz;
− 25 − pF
note 2
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 17 − pF
≤ 500 µs; δ≤0.01.
p
100
handbook, halfpage
h
FE
80
60
40
20
0
0123456
Measured under pulsed conditions; tp≤ 500 µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.
(1)
(2)
Fig.4 DC current gainas a function of collector
current; typical values.
MLC680
IC(A)
100
handbook, halfpage
C
c
(pF)
80
60
40
20
0
01020304050
Cc value is that of the die only; it is not measurable because of
internal matching network.
f = 1 MHz.
VCB(V)
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
MLC681
1995 Jun 29 4
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