Philips BLV93 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV93
UHF power transistor
Product specification
March 1993
Philips Semiconductors Product specification
UHF power transistor BLV93
DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended
for use in mobile radio transmitters in the 900 MHz
communications band.
QUICK REFERENCE DATA
R.F. performance at T
MODE OF OPERATION V
=25°C in a common-emitter class-B test circuit
h
CE
V
narrow band; c.w.
12,5 900 8 > 6,5 > 50
9,6 900 6 typ. 6,0 typ. 59
PINNING - SOT171A
PIN SYMBOL DESCRIPTION
1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter
FEATURES
• multi-base structure and emitter-ballasting resistors for
an optimum temperature profile
• internal input matching to achieve an optimum wideband
capability and high power gain
• gold metallization ensures excellent reliability.
The transistor has a 6-lead flange envelope with a ceramic
cap (SOT-171). All leads are isolated from the flange.
f
MHz
handbook, halfpage
P
L
W
Top view
12345
G
p
dB
6
b
MAM141
Fig.1 Simplified outline and symbol.
η
C
%
c
e
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
March 1993 2
Philips Semiconductors Product specification
UHF power transistor BLV93
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current
d.c. or average I
(peak value); f > 1 MHz I
Total power dissipation
at T
=67°CP
mb
=67°C; f > 1 MHz P
at T
mb
Storage temperature T
Operating junction temperature T
CBOM
CEO
EBO
; I
C
CM
tot(dc)
tot(rf)
stg
j
C AV
max. 36 V
max. 16 V
max. 3 V
max. 1,6 A
max. 4,8 A
max. 18 W
max. 24 W
−65 to +150 °C
max. 200 °C
CE
(V)
MDA422
40
handbook, halfpage
P
tot
(W)
32
24
16
2
10
I Continuous operation
II Continuous operation (f > 1 MHz)
III Short-time operation during mismatch; (f > 1 MHz)
10
handbook, halfpage
I
C
(A)
1
−1
10
110
R
= 0,4 K/W
th mb-h
Th = 60 °C
V
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
Dissipation = 12 W; T
= 112 °C
mb
From junction to mounting base
(d.c. dissipation) R
(r.f. dissipation) R
From mounting base to heatsink R
MDA423
III
II
I
8
0
0
50 100
150
Th (°C)
200
Fig.3 Power/temperature derating curves.
th j-mb(dc)
th j-mb(rf)
th mb-h
max. 7,0 K/W
max. 5,2 K/W
max. 0,4 K/W
March 1993 3
Philips Semiconductors Product specification
UHF power transistor BLV93
CHARACTERISTICS
T
=25°C unless otherwise specified
j
Collector-base breakdown voltage
open emitter; I
Collector-emitter breakdown voltage
open base; IC= 40 mA V
Emitter-base breakdown voltage
open collector; IE= 2 mA V
Collector cut-off current
VBE= 0; VCE= 16 V I
Second breakdown energy
L = 25 mH; f = 50 Hz; R
D.C. current gain
I
= 1,2 A; VCE= 10 V h
C
Transition frequency at f = 500 MHz
−IE= 1,2 A; VCE= 12,5 V f
Collector capacitance at f = 1 MHz
I
= 0; VCB= 12,5 V C
E=ie
Feed-back capacitance at f = 1 MHz
I
= 0; VCE= 12,5 V C
C
Collector-flange capacitance C
= 20 mA V
C
=10Ω E
BE
(1)
(BR)CBO
(BR)CEO
(BR)EBO
CES
SBR
FE
T
c
re
cf
> 36 V
> 16 V
> 3V
< 10 mA
> 2mJ
> 25
typ. 4 GHz
typ. 15 pF
typ. 9 pF
typ. 2 pF
Note
1. Measured under pulse conditions: t
100
handbook, halfpage
h
FE
80
V
60
40
20
0
012
CE
Fig.4 Tj=25°C; typical values.
= 50 µs; δ <1%.
p
MDA424
12.5 V
= 10 V
IC (A)
4
3
handbook, halfpage
5
f
T
(GHz)
4
3
2
1
0
−0.8 −1.6 −2.4
0 −4
−3.2
Fig.5 VCB= 12,5 V; f = 500 MHz; Tj=25°C;
typical values.
MDA425
IE (A)
March 1993 4
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