Philips BLV920 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D076
BLV920
UHF power transistor
Product specification
Supersedes data of 1995 Apr 10
1997 Nov 17
Philips Semiconductors Product specification
UHF power transistor BLV920
FEATURES
• Internal input matching to achieve high power gain and
easy design of wideband circuits
• Emitter ballasting resistors for an optimum temperature
profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Base station transmitters in the 820 to 960 MHz range.
PINNING - SOT171A
PIN SYMBOL DESCRIPTION
1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter
DESCRIPTION
NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor is
encapsulated in a 6-lead SOT171A flange envelope with a
ceramic cap. All leads are isolated from the flange.
handbook, halfpage
Top view
12345
6
b
MAM141
c
e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common emitter test circuit.
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-AB 960 26 20 ≥10 ≥ 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Nov 17 2
Philips Semiconductors Product specification
UHF power transistor BLV920
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 3A
average collector current − 3A
total power dissipation up to Tmb=25°C − 50 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to
P
= 49 W; Tmb=25°C 3.5 K/W
tot
mounting base
thermal resistance from mounting
0.4 K/W
base to heatsink
10
handbook, halfpage
I
C
(A)
1
1
10
11010
(1) Tmb=25°C.
(2) Th=70°C.
(2)
Fig.2 DC SOAR.
(1)
VCE(V)
MLC669
80
handbook, halfpage
P
tot
(W)
60
(2)
40
(1)
20
2
0
0 20 40 60 80 100 120 140
(1) Continuous operation.
(2) Short-time operation during mismatch.
MLC670
o
T ( C)
h
Fig.3 Power derating curves.
1997 Nov 17 3
Philips Semiconductors Product specification
UHF power transistor BLV920
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
Note
1. Measured under pulsed conditions: t
collector-base breakdown
open emitter; IC=15mA 70 −−V
voltage
collector-emitter breakdown
open base; IC=30mA 30 −−V
voltage
emitter-base breakdown
open collector; IE= 0.6 mA 3 −−V
voltage
collector leakage current VBE= 0; VCE=28V −−1.5 mA
DC current gain VCE= 10 V; IC= 1 A; note 1 30 − 120
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz − 17 − pF
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 11 − pF
≤ 500 µs; δ≤0.01.
p
100
handbook, halfpage
h
FE
80
60
40
20
0
0123456
Measured under pulsed conditions; tp≤ 500 µs; δ≤0.01.
(1) VCE=26V.
(2) VCE=10V.
(1)
(2)
Fig.4 DC current gainas a function of collector
current; typical values.
MLC671
IC(A)
60
handbook, halfpage
C
c
(pF)
40
20
0
01020304050
IE=ie= 0; f = 1 MHz.
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
MLC672
VCB(V)
1997 Nov 17 4
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