Philips blv91 sl DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV91/SL

UHF power transistor

Product specification

September 1988

Philips Semiconductors Product specification

UHF power transistor BLV91/SL

DESCRIPTION

NPN silicon planar epitaxial transistor designed for use in
mobile radio transmitters in the 900 MHz band.

QUICK REFERENCE DATA

RF performance in a common-emitter class-B circuit

MODE OF OPERATION

narrow band; CW T

T

°C

= 25 12.5 900 2 > 6.5 > 50

mb

(1)

=25

T

a
a

=25

(1)

T

V

CE

V

12.5 900 1.5 > 6.5 > 50

9.6 900 1.5 typ. 6.6 typ. 60

Note

1. Device mounted on a printed-circuit board (see Fig.6).

FEATURES

• diffused emitter-ballasting resistors for an optimum
temperature profile.

• gold metallization ensures excellent reliability.

• the device can be applied at rated load power, without

an external heatsink, when it is mounted on a
printed-circuit board (see Fig.6).

The transistor has a 4-lead envelope with a ceramic cap
(SOT-172D). All leads are isolated from the mounting
base.

f

MHz

P

W

L

G

p

dB

η

C

%

PIN CONFIGURATION

PINNING - SOT172D.

PIN DESCRIPTION

1 emitter

handbook, halfpage

1

2 base
3 collector
4 emitter

2

4

Top view

3

MSB007

Fig.1 Simplified outline. SOT172D.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe
provided that the BeO disc is not damaged.

September 1988 2

Philips Semiconductors Product specification

UHF power transistor BLV91/SL

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V

CBO
CEO
EBO

Collector current

DC or average I
(peak value); f > 1 MHz I

C
CM

; I

C(AV)

Total power dissipation

f > 1 MHz; Tmb≤ 90 °CP
Storage temperature T
Operating junction temperature T

tot(RF)
stg
j

max. 36 V
max. 16 V
max. 3 V

max. 0.4 A
max. 1.2 A

max. 6 W

−65 to + 150 °C

max. 200 °C

120

MDA398

Tmb (°C)

160

10

handbook, halfpage

P

tot(rf)

(W)

8

6

4

2

0

0

I Continuous RF operation (f > 1 MHz)
II Short-time RF operation during mismatch (f > 1 MHz)

II

I

40 80

Fig.2 Power/temperature curve.

THERMAL RESISTANCE

Dissipation = 4.5 W

(1)

From junction to ambient

=25°CR

T

a

(f > 1 MHz)

th j-a (RF)

max. 55 K/W

From junction to mounting base

Tmb=25°C (f > 1 MHz) R

th j-mb (RF)

max. 15 K/W

Note

1. Device mounted on a printed-circuit board (see Fig.6).

September 1988 3

Philips Semiconductors Product specification

UHF power transistor BLV91/SL

CHARACTERISTICS

T

=25°C unless otherwise specified

j

Collector-base breakdown voltage

open emitter; I
Collector-emitter breakdown voltage

open base; IC= 10 mA V
Emitter-base breakdown voltage

open collector; IE= 0.5 mA V
Collector cut-off current

VBE= 0; VCE=16V I
Second breakdown energy

L = 25 mH; f = 50 Hz; R
D.C. current gain

I

= 0.3 A; VCE=10V h

C

Collector capacitance at f = 1 MHz

I

= ie=0;VCB= 12.5 V C

E

Feedback capacitance at f = 1 MHz

I

= 0; VCE= 12.5 V C

C

Collector-mounting base capacitance C

= 5 mA V

C

=10Ω E

BE

(BR)CBO

(BR)CEO

(BR)EBO

CES

SBR

FE

C

re
c-mb

> 36 V

> 16 V

> 3V

< 2.5 mA

> 0.55 mJ

> 25

typ. 3.5 pF

typ. 2.0 pF
typ. 0.5 pF

120

handbook, halfpage

h

FE

80

40

0

0

0.3

0.6 1.20.9

MDA399

V

CE

12.5 V

10 V

IC (A)

=

Fig.3 Tj=25°C; typical values.

September 1988 4

handbook, halfpage

8

C

c

(pF)

6

4

2

0

08

Fig.4 IE=ie= 0; f = 1 MHz; typical values.

MDA400

16 24

VCB (V)