Philips BLV910-P Datasheet
DATA SH EET
Product specification
1995 Apr 11
DISCRETE SEMICONDUCTORS
Philips Semiconductors
BLV910
UHF power transistor
1995 Apr 11 2
Philips Semiconductors Product specification
UHF power transistor BLV910
FEATURES
• Internal input matching to achieve high power gain and
easy design of wideband circuits
• Emitter ballasting resistors for an optimum temperature
profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Base station transmitters in the 820 to 960 MHz range.
DESCRIPTION
NPN silicon planar epitaxial transistor intended for
common emitter class-AB operation. The transistor is
encapsulated in a 6-lead SOT171 flange envelope with a
ceramic cap. All leads are isolated from the flange.
PINNING - SOT171
PIN SYMBOL DESCRIPTION
1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM141
Top view
e
c
b
12345
6
QUICK REFERENCE DATA
RF performance at T
mb
= 25 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
CW, class-AB 960 26 10 ≥11 ≥ 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1995 Apr 11 3
Philips Semiconductors Product specification
UHF power transistor BLV910
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 70 V
V
CEO
collector-emitter voltage open base − 30 V
V
EBO
emitter-base voltage open collector − 3V
I
C
collector current (DC) − 1.5 A
I
C(AV)
average collector current − 1.5 A
P
tot
total power dissipation up to Tmb=25°C − 30 W
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
thermal resistance from junction to
mounting base
P
tot
= 30 W; Tmb=25°C 5.85 K/W
R
th mb-h
thermal resistance from mounting
base to heatsink
0.4 K/W
Fig.2 DC SOAR.
(1) Tmb=25°C.
(2) Th=70°C.
handbook, halfpage
10
1
10
11010
I
C
(A)
VCE(V)
(1)
MLC658
2
1
(2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
10
20
30
40
0 20 40 60 80 100 120 140
T ( C)
o
h
P
tot
(W)
(2)
MLC659
(1)
1995 Apr 11 4
Philips Semiconductors Product specification
UHF power transistor BLV910
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown
voltage
open emitter; IC= 5 mA 70 −−V
V
(BR)CEO
collector-emitter breakdown
voltage
open base; IC=15mA 30 −−V
V
(BR)EBO
emitter-base breakdown
voltage
open collector; IE= 0.3 mA 3 −−V
I
CES
collector leakage current VBE= 0; VCE=28V −−0.75 mA
h
FE
DC current gain VCE= 10 V; IC= 0.5 A; 30 − 120
C
c
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz − 10 − pF
C
re
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 6 − pF
Fig.4 DC current gainas a function of collector
current; typical values.
(1) VCE= 26 V: measured under pulsed conditions;
t
p
≤ 500 µs; δ<0.01.
(2) VCE=10V.
handbook, halfpage
0
40
60
20
80
100
0 0.5 1.0 1.5 2.0 2.5
h
FE
IC(A)
MLC660
(1)
(2)
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
IE=ie= 0; f = 1 MHz.
handbook, halfpage
0
10
40
30
20
01020304050
(pF)
C
c
VCB(V)
MLC661
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