Philips BLV909 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D175

BLV909

UHF power transistor

Product speciﬁcation Supersedes data of 1996 Nov 04

1999 Jun 25

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV909

FEATURES

• Emitter ballasting resistors for optimum temperature profile

• Gold metallization ensures excellent reliability

• Internal input matching to achieve high power gain and

easy design of wideband circuits.

APPLICATIONS

• Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range.

DESCRIPTION

NPN silicon planar epitaxial transistor in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base.

QUICK REFERENCE DATA

RF performance at T

=25°C in a common emitter test circuit.

mb

PINNING - SOT409B

PIN SYMBOL DESCRIPTION

1, 4, 5, 8 e emitter

2, 3 b base 6, 7 c collector

handbook, halfpage

85

14

Top view

MSA467

Fig.1 Simplified outline and symbol.

c

b

e

MODE OF OPERATION

f

(MHz)

V

(V)

CE

P

(W)

L

G

(dB)

p

η

C

(%)

CW, class-AB 960 26 9 ≥9.5 ≥50 −

2-tone, class-AB f1= 960; f2= 960.1 26 9 (PEP) ≥9.5 ≥35 typ. −30

d

im

(dBc)

1999 Jun 25 2

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV909

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

collector-base voltage open emitter − 70 V collector-emitter voltage open base − 30 V emitter-base voltage open collector − 3V collector current (DC) − 1.5 A average collector current − 1.5 A total power dissipation Tmb=25°C; note 1 − 29 W storage temperature −65 +150 °C operating junction temperature − 200 °C

thermal resistance from junction to

P

= 29 W; Tmb=25°C; note 1 6 K/W

tot

mounting base

Note to the Limiting values and Thermal characteristics

1. Transistor with metallized ground plane mounted on a printed-circuit board, see

Handbook SC19a.”

10

handbook, halfpage

I

C

(A)

1

−1

10

11010

VCE (V)

MGG301

2

50

handbook, halfpage

P

tot

(W)

40

30

20

10

0

040

“Mounting and soldering section,

MGD273

(1)

(2)

80 160

120

Tmb (

o

C)

Tmb=25°C.

Fig.2 DC SOAR.

1999 Jun 25 3

(1) Short-time operation during mismatch. (2) Continuous operation.

Fig.3 Power derating curves.

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV909

CHARACTERISTICS

=25°C unless otherwise speciﬁed.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

collector-base breakdown voltage open emitter; IC=5mA 70 −−V collector-emitter breakdown voltage open base; IC=15mA 30 −−V emitter-base breakdown voltage open collector; IE= 0.3 mA 3 −−V collector leakage current VCE= 28 V; VBE=0 −−0.75 mA DC current gain VCE= 10 V; IC= 500 mA 30 − 120 collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz − 10 − pF feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 6 − pF

100

handbook, halfpage

h

FE

80

60

40

20

0

012

(1) VCE= 26V; tp= 500 µs; δ≤1%. (2) VCE=10V.

(1)

(2)

MGD274

I

(A)

C

Fig.4 DC current gain as a function of collector

current; typical values.

60

handbook, halfpage

C

(pF)

40

20

C

c

C

3

0

f = 1 MHz.

10 50

0

re

20 30 40

MGG302

VCB (V)

Fig.5 Collector and feedback capacitance as a

function of collector-base voltage; typical values.

1999 Jun 25 4

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV909

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter test circuit (see Figs 12 and 13).

mb

MODE OF OPERATION

f

(MHz)

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

η

(%)

C

d

im

(dBc)

CW, class-AB 960 26 25 9 ≥9.5, typ. 11.5 ≥50, typ. 55 −

2-tone, class-AB f1= 960; f2= 960.1 26 25 9 (PEP) ≥9.5, typ. 11.5 ≥35, typ. 40 typ. −30

Ruggedness in class-AB operation

The BLV909 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the following conditions: f = 960 MHz; V

16

handbook, halfpage

G

p

(dB)

12

8

4

G

p

η

C

= 26 V; ICQ= 25 mA; Tmb=25°C.

CE

MGG304

80

η

(%)

60

40

20

C

handbook, halfpage

P

(W)

16

L

12

8

4

MGG303

0

04812

VCE= 26 V; ICQ= 25 mA; f = 960 MHz.

PL (W)

Fig.6 Power gain and collector efﬁciency as

functions of load power; typical values.

0

VCE= 26 V; ICQ= 25 mA; f = 960 MHz.

0.4 1.6

0.8 1.2 PD (W)

Fig.7 Load power as a function of drive power;

typical values.

1999 Jun 25 5