Philips BLV904 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV904

UHF power transistor

Product speciﬁcation Supersedes data of 1996 Feb 08

1997 Jul 15

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV904

FEATURES

• Emitter ballasting resistors for optimum temperature profile

• Gold metallization ensures excellent reliability

• Internal input matching to achieve high power gain and

easy design of wideband circuits.

APPLICATIONS

PINNING - SOT409B

PIN DESCRIPTION

1, 4, 5, 8 emitter

2, 3 base 6, 7 collector

handbook, halfpage

85

• Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range.

DESCRIPTION

14

Top view

b

MSA467

NPN silicon planar epitaxial power transistor in an 8-lead SOT409B SMD package with ceramic cap.

Fig.1 Simplified outline and symbol.

All leads are isolated from the mounting base.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common emitter test circuit.

mb

f

(MHz)

V

(V)

CE

P

(W)

L

G

p

(dB)

η

(%)

C

CW, class-AB 960 26 5 ≥13 ≥50 −

2-tone, class-AB f1= 960; f2= 960.1 26 5 (PEP) typ. 15.5 typ. 40 typ. −30

c

e

d

im

(dBc)

1997 Jul 15 2

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV904

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

Note

1. Transistor with metallized ground plane mounted on a printed-circuit board, see

recommendations in the General part of handbook SC19a”

collector-base voltage open emitter − 60 V collector-emitter voltage open base − 28 V emitter-base voltage open collector − 4V collector current (DC) − 1.2 A collector current (average) − 1.2 A total power dissipation Tmb=25°C; note 1 − 17 W storage temperature −65 +150 °C operating junction temperature − 200 °C

“Mounting and soldering

.

10

handbook, halfpage

I

C

(A)

1

−1

10

11010

(1) Ts=60°C.

Fig.2 DC SOAR.

MGD934

(1)

V

(V)

CE

2

16

handbook, halfpage

P

tot

(W)

12

8

4

0

0 40 200

80 120 160

MGD935

Ts (°C)

Fig.3 Total power dissipation as a function of the

soldering point temperature.

1997 Jul 15 3

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV904

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

Note

1. Transistor with metallized ground plane mounted on a printed-circuit board, see

recommendations in the General part of handbook SC19a”

CHARACTERISTICS

T

=25°C unless otherwise speciﬁed.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

thermal resistance from junction to

P

= 17 W; Tmb=25°C; note 1 10 K/W

tot

mounting base

“Mounting and soldering

.

collector-base breakdown voltage open emitter; IC= 5 mA 60 −−V collector-emitter breakdown voltage open base; IC=10mA 28 −−V emitter-base breakdown voltage open collector; IE= 0.5 mA 4 −−V collector leakage current VCE= 26 V; VBE=0 −−1.3 mA DC current gain VCE= 26 V; IC= 600 mA 30 − 120 collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz − 6 − pF feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 2.5 − pF

120

handbook, halfpage

h

FE

80

40

0

(1) VCE= 26V; tp= 500 µs; δ =<1%. (2) VCE=10V.

0.4 0.8 1.61.2

(1)

(2)

Fig.4 DC current gain as a function of collector

current; typical values.

MGD936

IC (A)

50

handbook, halfpage

C

(pF)

40

30

20

10

0

f = 1 MHz.

C

c

C

re

10 20 30 40

Fig.5 Capacitance as a function of

collector-emitter voltage; typical values.

MGD937

VCE (V)

50

1997 Jul 15 4

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV904

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter test circuit.

mb

MODE OF OPERATION

f

(MHz)

CW, class-AB 960 26 15 5 ≥13

2-tone, class-AB f

= 960; f2= 960.1 26 15 5 (PEP) typ. 15.5 typ. 40 typ. −30

1

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

typ. 15.5

η

C

(%)

≥50

typ. 55

d

im

(dBc)

−

Ruggedness in class-AB operation

The BLV904 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the following conditions: f = 960 MHz; V

20

handbook, halfpage

G

p

(dB)

16

12

8

4

G

p

η

C

= 26 V; ICQ= 15 mA; PL= 5 W; Tmb=25°C.

CE

MGD938

100

80

60

40

20

η

C

handbook, halfpage

(%)

P

(W)

8

L

6

4

2

MGD939

0

02

CW, class-AB; VCE= 26 V; ICQ= 15 mA; f = 960 MHz; Tmb=25°C.

48

6

P

0

(W)

L

Fig.6 Power gain and collector efﬁciency as

functions of load power; typical values.

1997 Jul 15 5

0

0 0.1 0.2 0.3

CW, class-AB; VCE= 26 V; ICQ= 15 mA; f = 960 MHz; Tmb=25°C.

PD (W)

Fig.7 Load power as a function of drive power;

typical values.