Philips BLV90 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV90

UHF power transistor

Product specification

February 1996

Philips Semiconductors Product specification

UHF power transistor BLV90

DESCRIPTION

NPN silicon planar epitaxial transistor designed for use in
mobile radio transmitters in the 900 MHz band.

FEATURES

• diffused emitter-ballasting resistors for an optimum
temperature profile.

• gold metallization ensures excellent reliability.

• the device can be applied at rated output power without

an external heatsink when it is mounted on a
printed-circuit board (see Fig.6).

The transistor has a 4-lead envelope with a ceramic cap
(SOT-172D). All leads are isolated from the mounting
base.

QUICK REFERENCE DATA

RF performance at T

a

MODE OF OPERATION

=25°C in a common-emitter class-B circuit.

V

CE

V

f

MHz

(1)

P

W

L

G

p

dB

η

%

Narrow band; CW 12.5 900 1 > 7.5 > 50

9.6 900 1 typ. 7.0 typ. 57

Note

1. Device mounted on a printed-circuit board (see Fig.6).

C

PIN CONFIGURATION

PINNING - SOT172D.

PIN DESCRIPTION

1 emitter

handbook, halfpage

1

2 base
3 collector
4 emitter

2

4

Top view

3

MSB007

Fig.1 Simplified outline. SOT172D.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

February 1996 2

Philips Semiconductors Product specification

UHF power transistor BLV90

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V

CBO
CEO
EBO

Collector current

DC or average I
(peak value); f > 1 MHz I

C
CM

; I

C(AV)

Total power dissipation

f > 1 MHz; Tmb< 105 °CP
Storage temperature T
Operating junction temperature T

tot(rf)
stg
j

max. 36 V
max. 16 V
max. 3 V

max. 0.2 A
max. 0.6 A

max. 3.5 W

−65 to + 150 °C
max. 200 °C

120

MDA389

Tmb (°C)

160

P

tot(rf)
(W)

5

4

3

2

1

0

0

handbook, halfpage

I Continuous RF operation (f > 1 MHz)
II Short-time RF operation during mismatch (f > 1 MHz)

II

I

40 80

Fig.2 Power/temperature curve.

THERMAL RESISTANCE

Dissipation = 2.25 W

From junction to ambient

T

=25°CR

a

(1)

(f > 1 MHz)

th j−a (RF)

max. 60 K/W

From junction to mounting base

T

=25°C(f>1 MHz) R

mb

th j-mb (RF)

max. 19 K/W

Note

1. Device mounted on a printed-circuit board (see Fig.6).

February 1996 3