Philips BLV861 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D099
BLV861
UHF linear push-pull power
transistor
Product specification
Supersedes data of 1998 Jan 14
1998 Jan 16
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
FEATURES
• Double stage internal input and output matching
networks for an optimum wideband capability and
high gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Common emitter class-AB output stages of television
transmitter amplifiers (sound and vision) operating in
bands 4 and 5 (470 to 860 MHz).
DESCRIPTION
NPN silicon planar epitaxial transistor with two sections in
push-pull configuration. The device is encapsulated in a
SOT289A 4-lead rectangular flange package, with a
ceramic cap.
PINNING
PIN SYMBOL DESCRIPTION
1 c1 collector 1; note 1
2 c2 collector 2; note 1
3 b1 base 1
4 b2 base 2
5 e common emitters; note 2
Notes
1. Collectors c1 and c2 are internally connected.
2. Common emitters are connected to the flange.
handbook, halfpage
Top view
12
5
34
b1
b2
MAM374
c1
c2
e
Fig.1 Simplified outline (SOT289A) and symbol.
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
=25°C in a common emitter push-pull test circuit.
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
(dB)
p
η
C
(%)
∆G
(dB)
p
CW class-AB 860 28 100 ≥8.5 ≥55 ≤1
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 16 2
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 3V
collector current (DC) − 15 A
total power dissipation Tmb=25°C − 220 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to mounting base P
= 220 W; note 1 0.8 K/W
tot
thermal resistance from mounting base to heatsink 0.2 K/W
Note
1. Thermal resistance is determined under specified RF operating conditions.
CE
(V)
MGK766
2
2
10
handbook, halfpage
I
C
(A)
10
1
11010
Total device; both sections equally loaded.
(1) Tmb=25°C.
(2) Th=70°C.
(1)
(2)
V
Fig.2 DC SOAR.
1998 Jan 16 3
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV861
CHARACTERISTICS
Values apply to either transistor section; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
∆h
FE
C
c
collector-base breakdown voltage IE= 0; IC=35mA 65 −−V
collector-emitter breakdown voltage IB= 0; IC=90mA 30 −−V
emitter-base breakdown voltage IE= 2 mA; IC=0 3 −−V
collector-base leakage current VCB=28V −−3mA
DC current gain IC= 2.8 A; VCE=10V 30 − 120 −
DC current gain ratio of both sections IC= 4.5 A; VCE= 10 V 0.67 − 1.5 −
collector capacitance IE=ie= 0; VCE=28V;
Note
1. The value of C
is that of the die only; it is not measurable because of the internal matching network.
c
=25°C unless otherwise specified.
j
f = 1 MHz; note 1
− 47 − pF
APPLICATION INFORMATION
RF performance at T
MODE OF OPERATION
=25°C in a common emitter push-pull class-AB test circuit.
h
f
(MHz)
V
(V)
CE
I
CQ
(A)
P
(W)
L
G
p
(dB)
η
(%)
C
∆G
p
(dB)
CW class-AB 860 28 0.1 100 ≥8.5 ≥55 ≤1
Ruggedness in class-AB operation
The BLV861 is capable of withstanding a load mismatch corresponding to VSWR =3:1 through all phases under the
conditions: T
=25°C; f = 860 MHz; VCE= 28 V; ICQ= 0.1 A; PL= 100 W; R
h
th mb-h
= 0.2 K/W.
1998 Jan 16 4
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