Philips BLV859 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV859
UHF linear push-pull power
transistor
Product specification
Supersedes data of 1995 Oct 04
1996 Jul 26
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
FEATURES
• Double internal input and output matching for an
optimum wideband capability and high gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATION
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
DESCRIPTION
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT262B
4-lead rectangular flange package, with two ceramic caps.
It delivers a P
= 20 W in class-A operation at
o sync
860 MHz and a supply voltage of 25 V.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common emitter push-pull test circuit.
h
PINNING SOT262B
PIN SYMBOL DESCRIPTION
1 c1 collector 1
2 c2 collector 2
3 b1 base 1
4 b2 base 2
5 e emitter
handbook, halfpage
12
b1
55
34
Top view
b2
MAM031
Fig.1 Simplified outline and symbol.
c1
e
c2
MODE OF OPERATION
f
(MHz)
CW class-A 860 25 2 × 2.25 ≥20
V
(V)
CE
I
CQ
(A)
P
o sync
(W)
(1)
G
(dB)
≥10
p
(1)
Note
1. Three-tone test signal (−8, −16 and −10 dB); d
= −54 dB.
im
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Jul 26 2
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 28 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 15 A
average collector current − 15 A
total power dissipation Tmb=70°C; note 1 − 145 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to mounting-base P
= 145 W; Tmb=70°C note 1 0.9 K/W
tot
thermal resistance from mounting-base to heatsink note 1 0.15 K/W
Note to Limiting values and Thermal characteristics
1. Total device; both sections equally loaded.
120
MGD540
Tmb °C
320
handbook, halfpage
P
tot
(W)
240
160
80
0
0
(2)
(1)
40 80 160
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.2 Power derating curve.
1996 Jul 26 3
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
CHARACTERISTICS
Values apply to either transistor section; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE
C
c
C
re
collector-base breakdown voltage IC= 30 mA; IE=0 60 −−V
collector-emitter breakdown voltage IC= 60 mA; IB=0 28 −−V
emitter-base breakdown voltage IE= 1.2 mA; IC= 0 2.5 −−V
collector-base leakage current VCB= 27 V; VBE=0 −−3mA
collector-emitter leakage current VCE=20V −−6mA
DC current gain VCE= 25 V; IC= 2.25 A 30 − 140
collector capacitance VCB= 25 V; IE=ie=0;
feedback capacitance VCE= 25 V; IB= 0; f = 1 MHz − 22 − pF
Note
1. The value of C
is that of the die only; it is not measurable, because of the internal matching network.
c
=25°C unless otherwise specified.
j
f=1MHz
− 36
(1)
− pF
160
handbook, halfpage
h
FE
120
80
40
0
02
VCE= 25V; tp= 500 µs; δ =<1%.
4
MGD541
IC (A)
Fig.3 DC current gain as a function of collector
current; typical values.
30
MGD542
VCB (V)
80
handbook, halfpage
C
c
(pF)
60
40
20
6
0
IE=ie= 0; f = 1 MHz.
10 20 40
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
1996 Jul 26 4
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV859
APPLICATION INFORMATION
RF performance at T
=25°C in a common emitter push-pull class-A test circuit.
h
MODE OF OPERATION
f
(MHz)
CW class-A 860 25 2 × 2.25 ≥20
CW class-A 860 25 2 × 2.25 ≥20
V
(V)
CE
I
CQ
(A)
P
o sync
(W)
(1)
(2)
G
(dB)
≥10
≥10
p
d
im
(dB)
(1)
(2)
≤−54
≤−51
(1)
(2)
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −10 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
2. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), 0 dB corresponds to
peak sync level.
Ruggedness in class-A operation
The BLV859 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
conditions: V
80
handbook, halfpage
P
o sync
(W)
60
= 25 V; ICQ=2×2.25 A; f = 860 MHz; Th=25°C; P
CE
MGD543
(1)
(2)
o sync
14
handbook, halfpage
G
p
(dB)
10
=20W.
MGD544
(1)
(2)
40
20
0
024
VCE= 25 V; ICQ=2×2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.
6
P
i sync
8
(W)
Fig.5 Output power as a function of input power;
typical values.
6
2
020
VCE= 25 V; ICQ=2×2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.
40 60 80
P
o sync
(W)
Fig.6 Power gain as a function of output power;
typical values.
1996 Jul 26 5
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