Philips BLV859 Datasheet

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DATA SH EET

BLV859

UHF linear push-pull power
transistor

Product specification
Supersedes data of 1995 Oct 04

1996 Jul 26

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV859

FEATURES

• Double internal input and output matching for an
optimum wideband capability and high gain

• Polysilicon emitter ballasting resistors for an optimum
temperature profile

• Gold metallization ensures excellent reliability.

APPLICATION

• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.

DESCRIPTION

NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT262B
4-lead rectangular flange package, with two ceramic caps.
It delivers a P

= 20 W in class-A operation at

o sync

860 MHz and a supply voltage of 25 V.

QUICK REFERENCE DATA

RF performance at T

=25°C in a common emitter push-pull test circuit.

h

PINNING SOT262B

PIN SYMBOL DESCRIPTION

1 c1 collector 1
2 c2 collector 2
3 b1 base 1
4 b2 base 2
5 e emitter

handbook, halfpage

12

b1

55

34

Top view

b2

MAM031

Fig.1 Simplified outline and symbol.

c1

e

c2

MODE OF OPERATION

f

(MHz)

CW class-A 860 25 2 × 2.25 ≥20

V

(V)

CE

I

CQ

(A)

P

o sync

(W)

(1)

G

(dB)

≥10

p

(1)

Note

1. Three-tone test signal (−8, −16 and −10 dB); d

= −54 dB.

im

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1996 Jul 26 2

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV859

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

R

th mb-h

collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 28 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 15 A
average collector current − 15 A
total power dissipation Tmb=70°C; note 1 − 145 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

thermal resistance from junction to mounting-base P

= 145 W; Tmb=70°C note 1 0.9 K/W

tot

thermal resistance from mounting-base to heatsink note 1 0.15 K/W

Note to Limiting values and Thermal characteristics

1. Total device; both sections equally loaded.

120

MGD540

Tmb °C

320

handbook, halfpage

P

tot

(W)

240

160

80

0

0

(2)

(1)

40 80 160

(1) Continuous operation.
(2) Short-time operation during mismatch.

Fig.2 Power derating curve.

1996 Jul 26 3

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV859

CHARACTERISTICS

Values apply to either transistor section; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

h

FE

C

c

C

re

collector-base breakdown voltage IC= 30 mA; IE=0 60 −−V
collector-emitter breakdown voltage IC= 60 mA; IB=0 28 −−V
emitter-base breakdown voltage IE= 1.2 mA; IC= 0 2.5 −−V
collector-base leakage current VCB= 27 V; VBE=0 −−3mA
collector-emitter leakage current VCE=20V −−6mA
DC current gain VCE= 25 V; IC= 2.25 A 30 − 140
collector capacitance VCB= 25 V; IE=ie=0;

feedback capacitance VCE= 25 V; IB= 0; f = 1 MHz − 22 − pF

Note

1. The value of C

is that of the die only; it is not measurable, because of the internal matching network.

c

=25°C unless otherwise specified.

j

f=1MHz

− 36

(1)

− pF

160

handbook, halfpage

h

FE

120

80

40

0

02

VCE= 25V; tp= 500 µs; δ =<1%.

4

MGD541

IC (A)

Fig.3 DC current gain as a function of collector

current; typical values.

30

MGD542

VCB (V)

80

handbook, halfpage

C

c

(pF)

60

40

20

6

0

IE=ie= 0; f = 1 MHz.

10 20 40

Fig.4 Collector capacitance as a function of

collector-base voltage; typical values.

1996 Jul 26 4

Philips Semiconductors Product specification

UHF linear push-pull power transistor BLV859

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter push-pull class-A test circuit.

h

MODE OF OPERATION

f

(MHz)

CW class-A 860 25 2 × 2.25 ≥20
CW class-A 860 25 2 × 2.25 ≥20

V

(V)

CE

I

CQ

(A)

P

o sync

(W)

(1)
(2)

G

(dB)

≥10
≥10

p

d

im

(dB)

(1)
(2)

≤−54
≤−51

(1)
(2)

Notes

1. Three-tone test method (vision carrier −8 dB, sound carrier −10 dB, sideband signal −16 dB), 0 dB corresponds to

peak sync level.

2. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), 0 dB corresponds to

peak sync level.

Ruggedness in class-A operation

The BLV859 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
conditions: V

80

handbook, halfpage

P

o sync

(W)

60

= 25 V; ICQ=2×2.25 A; f = 860 MHz; Th=25°C; P

CE

MGD543

(1)

(2)

o sync

14

handbook, halfpage

G

p

(dB)

10

=20W.

MGD544

(1)
(2)

40

20

0

024

VCE= 25 V; ICQ=2×2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.

6

P

i sync

8

(W)

Fig.5 Output power as a function of input power;

typical values.

6

2

020

VCE= 25 V; ICQ=2×2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th=25°C.
(2) Th=70°C.

40 60 80

P

o sync

(W)

Fig.6 Power gain as a function of output power;

typical values.

1996 Jul 26 5