Philips BLV857 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV857
UHF linear push-pull power
transistor
Product specification
Supersedes data of 1995 Oct 04
1997 Jan 16
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV857
FEATURES
• Internal input matching for an optimum wideband
capability and high gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATION
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
DESCRIPTION
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT324B
4-lead rectangular flange package with a ceramic cap. The
common emitters are connected to the flange.
PINNING SOT324B
PIN SYMBOL DESCRIPTION
1 c1 collector 1
2 c2 collector 2
3 b1 base 1
4 b2 base 2
5 e common emitters
handbook, halfpage
12
b1
Top view
3
5
4
b2
MAM217
Fig.1 Simplified outline and symbol.
c1
e
c2
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
CW class-A 860 25 2 × 1.1 ≥10
=25°C in a common emitter push-pull test circuit.
h
f
(MHz)
V
(V)
CE
I
CQ
(A)
P
o sync
(W)
(1)
G
(dB)
≥10
p
(1)
Note
1. Three-tone test signal (−8, −16 and −10 dB); d
= −54 dB.
im
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Jan 16 2
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV857
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 28 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 7.4 A
average collector current − 7.4 A
total power dissipation Tmb=70°C; note 1; see Fig.2 − 80 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to mounting-base P
=80W;Tmb=70°C note 1 1.6 K/W
tot
thermal resistance from mounting-base to heatsink note 1 0.4 K/W
Note to Limiting values and Thermal characteristics
1. Total device; both sections equally loaded.
120
MBH754
Tmb (°C)
200
handbook, halfpage
P
tot
(W)
160
120
80
40
0
040
(1)
(2)
80 160
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.2 Power derating curve.
1997 Jan 16 3
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV857
CHARACTERISTICS
Values apply to either transistor section; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
collector-base breakdown voltage IC= 15 mA; IE=0 60 −−V
collector-emitter breakdown voltage IC= 30 mA; IB=0 28 −−V
emitter-base breakdown voltage IE= 0.6 mA; IC= 0 2.5 −−V
collector-base leakage current VCB=27V; VBE=0 −−1.5 mA
collector-emitter leakage current VCE=20V −−3mA
hFEDC current gain VCE=25V; IC= 1.1 A; see Fig.3 30 − 140
C
c
C
re
collector capacitance VCB=25V; IE=ie= 0; f = 1 MHz;
feedback capacitance VCE=25V; IC= 0; f = 1 MHz − 11 − pF
=25°C unless otherwise specified.
j
see Fig.4
− 18 − pF
160
handbook, halfpage
h
FE
120
80
40
0
01
VCE= 25V; tp= 500 µs; δ =<1%.
23
MBH756
I
(A)
c
Fig.3 DC current gain as a function of collector
current; typical values.
40
handbook, halfpage
C
c
(pF)
30
20
10
0
010
IE=ie= 0; f = 1 MHz.
20 30
VCB (V)
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
MBH755
40
1997 Jan 16 4
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