Philips BLV75/12 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV75/12

VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

VHF power transistor BLV75/12

DESCRIPTION

N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the
175 MHz commmunications band.

FEATURES

• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile

• gold metallization ensures
excellent reliability

• internal matching to achieve an
optimum wideband capability and
high power gain

The transistor has a 6-lead flange
envelope with a ceramic cap
(SOT-119). All leads are isolated from
the flange.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

=25°C in a common-emitter class-B circuit

h

CE

V

f

MHz

P

W

L

G

p

η

dB

narrow band; c.w. 12,5 175 75 > 6,5 > 55

PIN CONFIGURATION

PINNING

C

%

PIN DESCRIPTION

1 emitter

handbook, halfpage

1

2

2 emitter
3 base

3

4

4 collector
5 emitter
6 emitter

65

MSB006

Fig.1 Simplified outlinbe, SOT119A.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

VHF power transistor BLV75/12

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-base voltage (open emitter)

peak value v
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current

d.c. or average I

peak value; f > 1 MHz I
Total power dissipation

at T

=25°C; f > 1 MHz P

mb

Storage temperature T
Operating junction temperature T

CBOM

CEO
EBO

C
CM

tot
stg
j

max. 36 V
max. 16,5 V
max. 4 V

max. 15 A
max. 45 A

max. 150 W

−65 to + 150 °C
max. 200 °C

2

10

handbook, halfpage

I

C

(A)

10

1

110

Fig.2 D.C. soar. R

Th = 70 °C

Tmb = 25 °C

16.5

VCE (V)

= 0,2 K/W.

th mb-h

MGP390

200

handbook, halfpage

P

tot

(W)

ΙΙ

100

Ι

2

10

0

0 100 200

I Continuous operation (f >1 MHz)
II Short-time operation during mismatch; (f > 1 MHz).

Th (°C)

MGP391

Fig.3 Power/temperature derating curves;

R

th mb-h

= 0,2 K/W.

THERMAL RESISTANCE

Dissipation = 96 W; T

=25°C

mb

From junction to mounting base

(r.f. operation) R
From mounting base to heatsink R

August 1986 3

th j−mb
th mb−h

= 1,05 K/W
= 0,2 K/W

Philips Semiconductors Product specification

VHF power transistor BLV75/12

CHARACTERISTICS

T

=25°C unless otherwise specified

j

Collector-base breakdown voltage

open emitter; I
Collector-emitter breakdown voltage

open base; IC= 200 mA V
Emitter-base breakdown voltage

open collector; IE= 20 mA V
Collector cut-off current

VBE= 0; VCE= 16 V I
Second breakdown energy

L = 25 mH; f = 50 Hz; R
D.C. current gain

VCE= 10 V; IC= 10 A h

= 100 mA V

C

=10Ω E

BE

(BR)CBO

(BR)CEO

(BR)EBO

CES

SBR

FE

min. 36 V

min. 16,5 V

min. 4 V

max. 44 mA

min. 20 mJ

min.
typ.

15
55

Collector capacitance at f = 1 MHz

I

= 0; VCB= 12,5 V C

E=ie

Feedback capacitance at f = 1 MHz

I

= 0; VCE= 12,5 V C

C

Collector-flange capacitance C

80

handbook, halfpage

h

FE

40

VCE = 12.5 V

10 V

MGP392

800

handbook, halfpage

C

c

(pF)

400

c

re
cf

typ. 240 pF

typ. 150 pF
typ. 3 pF

MGP393

0

01020 40

30

IC (A)

Fig.4 D.C. current gain versus collector current;

Tj=25°C.

August 1986 4

0

0

10

VCB (V)

20

Fig.5 Output capacitance versus VCB;IE= ie=0;

f = 1 MHz; Tj=25°C.