Philips BLV59 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D076
BLV59
UHF linear power transistor
Product specification
Supersedes data of March 1993
1998 Jan 09
Philips Semiconductors Product specification
UHF linear power transistor BLV59
FEATURES
• Internal input matching to achieve an optimum
wideband capability and high power gain
• Emitter-ballasting resistors for lower junction
temperatures
• Titanium-platinum-gold metallization ensures long life
and excellent reliability.
APPLICATIONS
• UHF linear amplifiers in television transmitters.
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a 6-lead SOT171A flange package with a ceramic cap.
All leads are isolated from the flange.
PINNING - SOT171A
PIN SYMBOL DESCRIPTION
1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter
handbook, halfpage
Top view
6
b
12345
MAM141
Fig.1 Simplified outline and symbol.
c
e
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common emitter class-AB circuit.
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-AB 860 25 30 >7 >50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 09 2
Philips Semiconductors Product specification
UHF linear power transistor BLV59
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
I
CM
P
tot
T
stg
T
j
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 27 V
emitter-base voltage open collector − 3.5 V
collector current (DC) − 3A
average collector current − 3A
peak collector current f > 1 MHz − 9A
total power dissipation Tmb=25°C; f > 1 MHz − 70 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
10
handbook, halfpage
I
C
(A)
1
−1
10
11010
R
= 0.4K/W.
th mb-h
Th = 70 °C
Fig.2 DC SOAR.
T
amb
VCE (V)
MGP379
= 25 °C
handbook, halfpage
2
100
P
tot
(W)
50
0
0 200
(1) Continuous operation (f > 1 MHz).
(2) Short-time operation during mismatch (f > 1 MHz).
(2)
(1)
100
MGP380
Th (°C)
Fig.3 Power/temperature derating curves.
1998 Jan 09 3
Philips Semiconductors Product specification
UHF linear power transistor BLV59
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base Tmb=25°C, P
thermal resistance from mounting base to heatsink 0.4 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
E
(SBR)
h
FE
C
c
C
re
C
cf
collector-base breakdown voltage open emitter; IC=50mA 50 −−V
collector-emitter breakdown voltage open base; IC= 100 mA 27 −−V
emitter-base breakdown voltage open collector; IE=10mA 3.5 −− V
collector leakage current VCE= 27 V; VBE=0 −−10 mA
second breakdown energy L = 25 mH; f = 50 Hz; RBE=10Ω 4 −−mJ
DC current gain VCE= 24 V; IC=2A 15 −−
collector capacitance VCB= 25 V; IE=ie= 0; f = 1 MHz − 44 − pF
feedback capacitance VCE= 25 V; IC= 0; f = 1 MHz − 30 − pF
collector-flange capacitance − 2 − pF
= 50 W 2.3 K/W
tot
100
handbook, halfpage
h
FE
50
0
048
Tj=25°C.
VCE = 25 V
20 V
MGP381
IC (A)
Fig.4 DC current gain as a function of collector
current; typical values.
100
handbook, halfpage
C
c
(pF)
50
0
0 102030
IE=ie= 0; f = 1 MHz.
VCB (V)
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values
MGP382
1998 Jan 09 4
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