Philips BLV57 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV57
UHF linear push-pull power
transistor
Product specification
Supersedes data of August 1986
1998 Feb 09
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV57
FEATURES
• internally matched input for wideband operation and
high power gain
• internal midpoint (r.f. ground) reduces negative
feedback and improves power gain
• increased input and output impedances (compared with
single-ended transistors) simplify wideband matching
• length of the external emitter leads is not critical
• diffused emitter ballasting resistors for an optimum
temperature profile
• gold metallization ensures excellent reliability.
DESCRIPTION
Two n-p-n silicon planar epitaxial transistor sections in one
package to be used as push-pull amplifier, primarily
intended for use in linear u.h.f. television transmitters and
transposers.
The package is an 8-lead flange type with a ceramic cap.
All leads are isolated from the flange.
PINNING - SOT161A
PIN SYMBOL DESCRIPTION
1 e emitter
2 e emitter
3 c2 collector 2
4 b2 base 2
5 c1 collector 1
6 b1 base 1
7 e emitter
8 e emitter
handbook, halfpage
1
3
5
78
Top view
2
4
6
MBC826
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
R.F. performance in linear amplifier
MODE OF
OPERATION
f
vision
MHz
V
V
CE
IC1=I
A
C2
I
C(ZS)
class-A 860 25 0,85 −
T
h
A
°C
70
25
(1)
d
im
dB
−60
−55〉typ.612
class-AB 860 25 1,25 2 × 0,1 25 −−typ. 38
P
o sync
W
(1)
P
W
L
G
p
dB
〉
−
(2)
8,0
typ.
9,0
typ. 6,5
(2)
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to
peak sync level.
2. Power gain compression is 1 dB.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Feb 09 2
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV57
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); V
open base V
Emitter-base voltage (open collector) V
Collector current per transistor section
d.c. or average I
(peak value); f 〉 1 MHz I
Total power dissipation at T
R.F. power dissipation (f 〉 1 MHz); Tmb=25°C
Storage temperature T
Operating junction temperature T
Note
1. Dissipation of either transistor section should not exceed half rated dissipation.
=0 v
BE
=25°C
mb
(1)
(1)
CESM
CEO
EBO
C
CM
P
tot
P
rf
stg
j
; I
C(AV)
max. 50 V
max. 27 V
max. 3,5 V
max. 2 A
max. 4 A
max. 77 W
max. 93 W
−65 to + 150 °C
max. 200 °C
(1)
(1)
(1) Second breakdown limit
(independent of temperature).
10
handbook, halfpage
I
+ I
C1
C2
(A)
1
11010
Th = 70 °C
Fig.2 D.C. SOAR.
(1)
Tmb = 25 °C
VCE (V)
(1)
MGP358
2
1998 Feb 09 3
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV57
100
handbook, halfpage
P
tot
(W)
75
50
25
0
050
I Continuous d.c. (including r.f. class-A) operation
II Continuous r.f. operation
Dissipation of either transistor section should not exceed half rated dissipation.
Fig.3 Power derating curves vs. temperature.
MGP359
ΙΙ
Ι
T
(°C)
h
100
(1)
THERMAL RESISTANCE
(dissipation = 42 W; T
= 80,5 °C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
th j−mb(dc)
th j−mb(rf)
th mb−h
= 2,43 K/W
= 1,91 K/W
= 0,25 K/W
1998 Feb 09 4
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV57
handbook, full pagewidth
3
R
th j-h
(K/W)
2.5
2
1.5
02040
Th = 120
°C
100
80 °C 60 °C 40 °C
°C
100 °C
75 °C
175 °C
150 °C
125 °C
60
20 °C
0 °C
Tj = 200 °C
P
MGP360
(W)
tot
Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters. (R
th mb-h
= 0,25 K/W.)
10080
Example
Nominal class-A push-pull operation (without r.f. signal): V
Fig.4 shows: R
Typical device: R
T
T
th j-h
j
th j-h
j
max. 2,68 K/W
max. 184 °C
typ. 2,28 K/W
typ. 167 °C
= 25 V; IC1=IC2= 0,85 A; Th=70°C.
CE
1998 Feb 09 5
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV57
CHARACTERISTICS apply to either transistor section unless otherwise specified
T
=25°C
j
Collector-emitter breakdown voltage
V
= 0; IC= 10 mA V
BE
open base; I
= 25 mA V
C
Emitter-base breakdown voltage
open collector; I
= 5 mA V
E
Collector cut-off current
VBE= 0; VCE= 27 V I
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
(1)
IC= 0,85 A; VCE= 25 V h
(BR)CES
(BR)CEO
(BR)EBO
CES
SBO
SBR
FE
〉 50 V
〉 27 V
〉 3,5 V
〈 10 mA
〉 2mJ
〉 2mJ
〉
typ.
15
40
D.C. current gain ratio of transistor sections
I
= 0,85 A; VCE= 25 V 0,67 to 1,5
C
Collector-emitter saturation voltage
IC= 1,7 A; IB= 0,17 A V
Transition frequency at f = 100 MHz
−IE= 0,85 A; VCB= 25 V f
−I
= 1,7 A; VCB= 25 V f
E
(1)
CEsat
(2)
T
T
Collector capacitance at f = 1 MHz
= 0; VCB= 25 V C
I
E=Ie
c
Feedback capacitance at f = 1 MHz
I
= 50 mA; VCE= 25 V C
C
Collector-flange capacitance C
re
cf
Notes
1. Measured under pulse conditions: t
≤ 300 µs; δ≤0,02.
p
2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.
The graphs apply to either transistor section.
typ. 0,75 V
typ. 2,5 GHz
typ. 2,5 GHz
typ.
〈
2430pF
pF
typ. 15 pF
typ. 2 pF
1998 Feb 09 6
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV57
10
handbook, halfpage
I
C
(A)
1
−1
10
−2
10
MGP361
Th = 70 °C 25 °C
1.5
VBE (V)
Fig.5 Typical values; VCE= 25 V.
20.5 1
60
handbook, halfpage
h
FE
VCE = 25 V
40
20
0
012
Fig.6 Typical values; Tj=25°C.
1998 Feb 09 7
MGP362
5 V
IC (A)
Philips Semiconductors Product specification
UHF linear push-pull power transistor BLV57
handbook, halfpage
4
f
T
(GHz)
3
2
1
0
0123
typ
Fig.7 VCB= 25 V; f = 500 MHz; Tj=25°C.
MGP363
−IE (A)
100
handbook, halfpage
C
c
(pF)
75
50
25
0
0 102030
Fig.8 IE=Ie= 0; f = 1 MHz; Tj=25°C.
1998 Feb 09 8
MGP364
typ
VCB (V)
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