Philips blv45 12 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV45/12
VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
VHF power transistor BLV45/12
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the
175 MHz commmunications band.
FEATURES
• multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile
• gold metallization ensures
excellent reliability
• internal matching to achieve an
optimum wideband capability and
high power gain
The transistor has a 6-lead flange
envelope with a ceramic cap
(SOT-119). All leads are isolated from
the flange.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION V
=25°C in a common-emitter class-B circuit
h
CE
V
f
MHz
P
W
L
G
p
η
dB
narrow band; c.w. 12,5 175 45 > 6,5 > 55
PIN CONFIGURATION
PINNING
C
%
PIN DESCRIPTION
1 emitter
handbook, halfpage
1
2
2 emitter
3 base
3
4
4 collector
5 emitter
6 emitter
65
MSB006
Fig.1 Simplified outlinbe, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
VHF power transistor BLV45/12
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value v
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current
d.c. or average I
peak value; f > 1 MHz I
Total power dissipation
at T
=25°C; f > 1 MHz P
mb
Storage temperature T
Operating junction temperature T
CBOM
CEO
EBO
C
CM
tot
stg
j
max. 36 V
max. 16,5 V
max. 4 V
max. 9 A
max. 27 A
max. 90 W
−65 to + 150 °C
max. 200 °C
10
handbook, halfpage
I
C
(A)
1
110
R
= 0,2 K/W.
th mb-h
Th = 70 °C
Fig.2 D.C. soar.
Tmb = 25 °C
16.5
VCE (V)
MGP347
2
10
160
handbook, halfpage
P
tot
(W)
80
0
0
I Continuous operation (f > 1 MHz)
II Short-time operation during mismatch; (f > 1 MHz)
Fig.3 Power/temperature derating curves;
R
th mb-h
THERMAL RESISTANCE
Dissipation = 68 W; T
=25°C
mb
From junction to mounting base
(r.f. dissipation) R
From mounting base to heatsink R
ΙΙ
Ι
100
= 0,2 K/W.
th j−mb
th mb−h
MGP348
Th (°C)
200
= 1,58 K/W
= 0,2 K/W
August 1986 3
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