Philips BLV33F Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV33F
VHF linear power transistor
Product specification
1996 Oct 10
Philips Semiconductors Product specification
VHF linear power transistor BLV33F
FEATURES
• Internally matched input for wideband operation and
high power gain
• Diffused emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Primarily intended for use in linear VHF amplifiers for
television transmitters and transposers.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
1
⁄2” 6 lead SOT119A capstan package with ceramic cap.
All leads are isolated from the flange.
PINNING - SOT119A
PIN SYMBOL DESCRIPTION
1 e emitter
2 e emitter
3 b base
4 c collector
5 e emitter
6 e emitter
handbook, halfpage
1
3
2
4
65
c
b
e
MAM269
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a common emitter push-pull test circuit.
MODE OF
OPERATION
f
vision
(MHz)
V
(V)
CE
IC, I
(A)
CW, class-A 224.25 25 3.2
C(ZS)
T
(°C)
(1)
h
d
im
P
(dB)
o sync
(W)
(1)
G
P
(dB)
70 −55 >13 >13.5
25 −55 typ. 19 typ. 14.8
sync compr.
sync in/sync out
(%)
(2)
CW, class-AB 224.25 28 0.2 70 − typ. 85 typ. 10.5 30/25
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to
peak sync level.
2. Television service (negative modulation, C.C.I.R. system).
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 10 2
Philips Semiconductors Product specification
VHF linear power transistor BLV33F
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
V
EBO
I
C
I
C(AV)
I
CM
P
tot
P
rf
T
stg
T
j
THERMAL CHARACTERISTICS
collector-emitter voltage VBE=0 − 65 V
collector-emitter voltage open base − 33 V
emitter-base voltage open collector − 4V
collector current (DC) − 12.5 A
average collector current − 12.5 A
peak collector current f > 1 MHz − 20 A
total power dissipation (DC) Tmb=25°C − 133 W
RF power dissipation f > 1 MHz; Tmb=25°C − 162 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
handbook, halfpage
(A)
thermal resistance from junction to mounting
base (DC dissipation)
thermal resistance from junction to mounting
base (RF dissipation)
thermal resistance from mounting base to
heatsink
2
10
I
C
10
1
11010
(1)
(2)
MGG132
(3)
V
(V)
CE
2
P
=80W; Tmb=82°C;
diss
Th=70°C
P
=80W; Tmb=82°C;
diss
Th=70°C
P
=80W; Tmb=82°C;
diss
Th=70°C
200
handbook, halfpage
P
tot
(W)
150
100
50
0 10050
1.43 K/W
1.17 K/W
0.2 K/W
MGG133
(2)
(1)
Th (°C)
(1) Tmb=25°C.
(2) Th=70°C.
(3) Second breakdown limit (independent of temperature).
Fig.2 DC SOAR.
1996 Oct 10 3
(1) Continuous DC (including RF class-A) operation.
(2) Continuous RF operation.
Fig.3 Power derating curves.
Philips Semiconductors Product specification
VHF linear power transistor BLV33F
2.0
handbook, full pagewidth
R
th j-h
(K/W)
1.8
1.6
1.4
1.2
1.0
0
R
= 0.2 K/W.
th mb-h
75 °C
= 120 °C
T
h
100 °C
100 °C
125 °C
10050
80 °C
150 °C
175 °C
P
tot
(W)
MGG144
60 °C
40 °C
20 °C
0 °C
Tj = 200 °C
Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters.
150
Example
Nominal class-A operation (without RF signal): VCE= 25 V; IC= 3.2 A; Th=70°C.
Figure 4 shows:
R
= max. 1.63 K/W
th j-h
Tj= max. 200 °C.
Typical device:
R
= typ.1.53 K/W
th j-h
Tj= typ. 192 °C.
1996 Oct 10 4
Philips Semiconductors Product specification
VHF linear power transistor BLV33F
CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
V
CEsat
f
T
C
c
C
re
C
cf
collector-emitter breakdown voltage VBE= 0; IC=25mA 65 −−V
collector-emitter breakdown voltage open base; IC= 100 mA 33 −−V
emitter-base breakdown voltage open collector; IE=10mA 4 −−V
collector cut-off current VBE= 0; VCE=30V −−1mA
DC current gain VCE=25V; IC= 3 A; note 1 15 50 100
collector-emitter saturation voltage IC= 6 A; IB= 0.6 A; note 1 − 0.75 − V
transition frequency VCB=25V; IE=−3A;
− 680 − MHz
f = 100 MHz; note 2
V
=25V; IE=−6A;
CB
− 750 − MHz
f = 100 MHz; note 2
collector capacitance VCB=25V; IE=ie= 0; f = 1 MHz − 155 − pF
feedback capacitance IC= 50 mA; VCE=25V; f=1MHz − 88 − pF
collector-flange capacitance − 3 − pF
Notes
1. Measured under pulse conditions: t
≤ 300 µs; δ≤0.02.
p
2. Measured under pulse conditions: tp≤ 50 µs; δ≤0.01.
1996 Oct 10 5
Philips Semiconductors Product specification
VHF linear power transistor BLV33F
75
handbook, halfpage
h
FE
50
25
0
05 15
Tj=25°C.
(1) VCE=25V.
(2) VCE=5V.
(1)
(2)
10
MGG130
IC (A)
Fig.5 DC current gain as a function of collector
current; typical values.
600
handbook, halfpage
C
c
(pF)
400
200
0
02040
IE=ie= 0; f = 1 MHz; Tj=25°C.
VCB (V)
Fig.6 Collector capacitance as a function of
collector-base voltage; typical values.
MGG129
1000
handbook, halfpage
f
T
(MHz)
800
600
400
200
0
−0 −5 −15
VCB= 25 V; f = 100 MHz; Tj=25°C.
−10
MGG131
IE (A)
Fig.7 Transition frequency as a function of emitter
current; typical values.
10
handbook, halfpage
I
C
(A)
1
−1
10
VCE=25V.
(1) Th=70°C.
(2) Th=25°C.
(1)
(2)
Fig.8 Collector current as a function of
base-emitter voltage; typical values.
MGG118
VBE (V)
20.5 1 1.5
1996 Oct 10 6
Loading...