Philips BLV33 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV33

VHF linear power transistor

Product specification
Supersedes data of November 1995

1996 Oct 10

Philips Semiconductors Product specification

VHF linear power transistor BLV33

FEATURES

• Diffused emitter ballasting resistors for an optimum
temperature profile

• Gold sandwich metallization ensures excellent
reliability.

APPLICATIONS

• Primarily intended for use in linear VHF amplifiers for
television transmitters and transposers.

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a

1

⁄16" 4 fslead SOT147 capstan package with ceramic cap.

All leads are isolated from the stud.

PINNING - SOT147

PIN SYMBOL DESCRIPTION

1 c collector
2 e emitter
3 b base
4 e emitter

handbook, halfpage

Top view

2

1

3

4

MAM270

Fig.1 Simplified outline and symbol.

c

b

e

QUICK REFERENCE DATA

RF performance in a common emitter push-pull test circuit.

MODE OF

OPERATION

f

vision

(MHz)

V

(V)

CE

IC, I

(A)

CW, class-A 224.25 25 3.2

C(ZS)

T

(°C)

(1)

h

d

im

(dB)

P

o sync

(W)

(1)

G

(dB)

70 −55 >16.5 >9
25 −55 typ. 26 typ. 9.7

P

sync compr.

sync in/sync out

(%)

(2)

CW, class-AB 224.25 28 0.1 70 typ. 90 typ. 6.5 30/25

Notes

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal−16 dB), zero dB corresponds to

peak sync level.

2. Television service (negative modulation, C.C.I.R. system).

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1996 Oct 10 2

Philips Semiconductors Product specification

VHF linear power transistor BLV33

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

V

EBO

I

C

I

C(AV)

I

CM

P

tot

P

rf

T

stg

T

j

THERMAL CHARACTERISTICS

collector-emitter voltage VBE=0 − 65 V
collector-emitter voltage open base − 33 V
emitter-base voltage open collector − 4V
collector current (DC) − 12.5 A
average collector current − 12.5 A
peak collector current f > 1 MHz − 20 A
total power dissipation (DC) Tmb=25°C − 132 W
RF power dissipation f > 1 MHz; Tmb=25°C − 165 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb(dc)

thermal resistance from junction to

P

=80W; Tmb=82°C; Th=70°C 1.46 K/W

diss

mounting base (DC dissipation)

R

th j-mb(rf)

thermal resistance from junction to

P

=80W; Tmb=82°C; Th=70°C 1.17 K/W

diss

mounting base (RF dissipation)

R

th mb-h

thermal resistance from mounting

P

=80W; Tmb=82°C; Th=70°C 0.15 K/W

diss

base to heatsink

2

10

handbook, halfpage

I

C

(A)

10

1

11010

(1)

(3)

(2)

V

(V)

CE

MGG120

2

200

handbook, halfpage

P

tot

(W)

150

100

50

0 10050

(2)

(1)

MGG119

Th (°C)

(1) Tmb=25°C.
(2) Th=70°C.
(3) Second breakdown limit (independent of temperature).

Fig.2 DC SOAR.

1996 Oct 10 3

(1) Continuous DC (including RF class-A) operation.
(2) Continuous RF operation.

Fig.3 Power derating curves.

Philips Semiconductors Product specification

VHF linear power transistor BLV33

2.0

handbook, full pagewidth

R

th j-h

(K/W)

1.8

1.6

1.4

1.2

1.0
0

R

= 0.15 K/W.

th mb-h

75 °C

= 120 °C

T

h

100 °C

125 °C

10050

100 °C

150 °C

80 °C

P

tot

175 °C

(W)

MGG121

60 °C

40 °C

20 °C

0 °C

Tj = 200 °C

Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink

and junction temperature as parameters.

150

Example

Nominal class-A operation: VCE= 25 V; IC= 3.2 A; Th=70°C.
Figure 4 shows:

R

= max. 1.60 K/W

th j-h

Tj= max. 198 °C.

Typical device:

R

= typ.1.50 K/W

th j-h

Tj= typ. 190 °C.

1996 Oct 10 4

Philips Semiconductors Product specification

VHF linear power transistor BLV33

CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CES

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

V

CEsat

f

T

C

c

C

re

C

cs

collector-emitter breakdown voltage VBE= 0; IC=25mA 65 −−V
collector-emitter breakdown voltage open base; IC= 100 mA 33 −−V
emitter-base breakdown voltage open collector; IE=10mA 4 −−V
collector cut-off current VBE= 0; VCE=30V −−1mA
DC current gain VCE=25V; IC= 3 A; note 1 15 50 100
collector-emitter saturation voltage IC= 6 A; IB= 0.6 A; note 1 − 0.75 − V
transition frequency VCB=25V;IE=−3A;

− 680 − MHz

f = 100 MHz; note 2

transition frequency V

=25V;IE=−6A;

CB

− 750 − MHz

f = 100 MHz; note 2
collector capacitance VCB=25V; IE=ie= 0; f = 1 MHz − 155 − pF
feedback capacitance IC= 100 mA; VCE=25V;

− 88 − pF

f = 1 MHz
collector-stud capacitance − 3 − pF

Notes

1. Measured under pulse conditions: t

≤ 300 µs; δ≤0.02.

p

2. Measured under pulse conditions: tp≤ 50 µs; δ≤0.01.

1996 Oct 10 5

Philips Semiconductors Product specification

VHF linear power transistor BLV33

75

handbook, halfpage

h

FE

50

25

0

05 15

Tj=25°C.
(1) VCE=25V.
(2) VCE=5V.

(1)

(2)

10

MGG130

IC (A)

Fig.5 DC current gain as a function of collector

current; typical values.

600

handbook, halfpage

C

c

(pF)

400

200

0

02040

IE=ie= 0; f = 1 MHz; Tj=25°C.

VCB (V)

Fig.6 Collector capacitance as a function of

collector-base voltage; typical values.

MGG129

1000

handbook, halfpage

f

T

(MHz)

800

600

400

200

0

−0 −5 −15

VCB= 25 V; f = 100 MHz; Tj=25°C.

−10

MGG131

IE (A)

Fig.7 Transition frequency as a function of emitter

current; typical values.

10

handbook, halfpage

I

C

(A)

1

−1

10

VCE=25V.
(1) Th=70°C.
(2) Th=25°C.

(1)

(2)

Fig.8 Collector current as a function of

base-emitter voltage; typical values.

MGG118

VBE (V)

20.5 1 1.5

1996 Oct 10 6