Philips BLV25 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV25
VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
VHF power transistor BLV25
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily for use in
v.h.f.-f.m. broadcast transmitters.
FEATURES
• internally matched input for
wideband operation and high
power gain;
• multi-base structure and diffused
emitter ballasting resistors for an
optimum temperature profile;
• gold-metallization ensures
excellent reliability.
The transistor has a1⁄2in 6-lead
flange envelope with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OPERATION
=25°C in an unneutralized common-emitter class-B circuit.
h
V
CE
V
f
MHz
P
W
L
P
S
W
G
dB
p
narrow band; c.w. 28 108 175 < 17,5 > 10,0 > 65
PIN CONFIGURATION
PINNING
PIN DESCRIPTION
1 emitter
handbook, halfpage
1
2
2 emitter
3 base
3
4
4 collector
5 emitter
6 emitter
65
η
%
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
VHF power transistor BLV25
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); V
open base V
Emitter-base voltage (open collector) V
Collector current
d.c. or average I
(peak value); f > 1 MHz I
Total power dissipation at T
R.F. power dissipation (f > 1 MHz); T
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
=0 V
BE
=25°CP
mb
=25°CP
mb
=70°CP
h
CESM
CEO
EBO
; I
C
C(AV)
CM
tot (d.c.)
tot (r.f.)
tot (r.f.)
stg
j
max. 65 V
max. 33 V
max. 4 V
max. 17, 5 A
max. 35 A
max. 220 W
max. 270 W
max. 146 W
−65 to +150 °C
max. 200 °C
2
10
handbook, halfpage
I
C
(A)
10
1
11010
(1) Second breakdown limit.
Tmb = 25 °C
Th = 70 °C
Fig.2 D.C. SOAR.
(1)
VCE (V)
MGP294
2
300
handbook, halfpage
P
tot
(W)
200
100
0
0 100
I Continuous d.c. operation
II Continuous r.f. operation (f > 1 MHz)
III Short-time operation during mismatch; (f > 1 MHz).
ΙΙΙ
ΙΙ
Ι
50
Th (°C)
Fig.3 Power derating curves vs. temperature.
MGP295
THERMAL RESISTANCE
(dissipation = 150 W; T
=72°C, i.e. Th=42°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
August 1986 3
th j-mb(dc)
th j-mb(rf)
th mb-h
max 0,85 K/W
max 0,60 K/W
max 0,2 K/W
Philips Semiconductors Product specification
VHF power transistor BLV25
CHARACTERISTICS
T
=25°C
j
Collector-emitter breakdown voltage
V
=0;IC=50mA V
BE
open base; I
= 200 mA V
C
Emitter-base breakdown voltage
open collector; I
=20mA V
E
Collector cut-off current
VBE=0;VCE= 33 V I
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
(1)
IC= 8,5 A; VCE=25V h
Collector-emitter saturation voltage
(1)
IC= 20 A; IB= 4,0 A V
Transition frequency at f = 100 MHz
(2)
−IE= 8,5 A; VCB=25V f
−I
= 20 A; VCB=25V f
E
Collector capacitance at f = 1 MHz
I
= 0; VCB=25V C
E=Ie
Feedback capacitance at f=1MHz
IC= 100 mA; VCE=25V C
Collector-flange capacitance C
(BR)CES
(BR)CEO
(BR)EBO
CES
SBO
SBR
FE
CEsat
T
T
c
re
cf
> 65 V
> 33 V
> 4V
< 25 mA
> 20 mJ
> 20 mJ
typ. 50
15 to 100
typ. 1,6 V
typ. 600 MHz
typ. 600 MHz
typ. 275 pF
typ. 155 pF
typ. 3 pF
Notes
1. Measured under pulse conditions: t
≤ 300 µs; δ≤0,02.
p
2. Measured under pulse conditions: tp≤ 50 µs; δ≤0,01.
August 1986 4
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