Philips BLV21 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV21

VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

VHF power transistor BLV21

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.

QUICK REFERENCE DATA

R.F. performance up to T

MODE OF OPERATION V

= 25 °C in an unneautralized common-emitter class-B circuit

h

CE

V

c.w. 28 175 15 > 10 > 65 1,4 + j1,85 33 − j27,5

PIN CONFIGURATION

handbook, halfpage

1

It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.

f

MHz

P

L

W

4

G
dB

p

η

%

z

I

Ω

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

Y

mS

L

23

MSB057

Fig.1 Simplified outline, SOT123.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2

Philips Semiconductors Product specification

VHF power transistor BLV21

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

= 0)

CESM
CEO

EBO
C(AV)
CM

=25°CP

mb

rf

stg

j

max. 65 V
max. 36 V
max. 4 V
max. 1,75 A
max. 5,0 A
max. 36 W

−65 to + 150 °C

max. 200 °C

handbook, halfpage

2

I

C

(A)

1.5

1

0.5

0

10 20 30 40

Tmb = 25 °C

Th = 70 °C

Fig.2 D.C. SOAR.

VCE (V)

MGP283

60

handbook, halfpage

P

tot

(W)

40

20

0

I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch

ΙΙΙ

ΙΙ

derate by 0.2 W/K

0.16 W/K

Ι

0 50 100

Th (°C)

MGP284

Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.

THERMAL RESISTANCE

(dissipation = 15 W; T

= 74,5 °C, i.e. Th=70°C)

mb

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

August 1986 3

th j-mb(dc)
th j-mb(rf)
th mb-h

= 6,55 K/W
= 4,95 K/W
= 0,3 K/W

Philips Semiconductors Product specification

VHF power transistor BLV21

CHARACTERISTICS

=25°C

T

j

Collector-emitter breakdown voltage

VBE= 0; IC= 5 mA V

Collector-emitter breakdown voltage

open base; I

= 25 mA V

C

Emitter-base breakdown voltage

open collector; IE= 2 mA V

Collector cut-off current

V

= 0; VCE= 36 V I

BE

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

I

= 0,7 A; VCE=5 V h

C

Collector-emitter saturation voltage

(1)

(1)

IC= 2 A; IB= 0,4 A V

Transition frequency at f = 100 MHz

(1)

−IE= 0,7 A; VCB= 28 V f

−I

= 2 A; VCB= 28 V f

E

Collector capacitance at f = 1 MHz

I

=0;VCB= 28 V C

E=Ie

Feedback capacitance at f = 1 MHz

I

= 100 mA; VCE= 28 V C

C

Collector-flange capacitance C

(BR) CES

(BR) CEO

(BR)EBO

CES

SBO
SBR

FE

CEsat

T
T

c

re
cf

> 65 V

> 36 V

> 4V

< 2mA

> 2,5 mJ
> 2,5 mJ

typ. 50

10 to 100

typ. 0,65 V

typ. 650 MHz
typ. 625 MHz

typ. 18 pF

typ. 12,8 pF
typ. 2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

August 1986 4