Philips BLV21 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV21
VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
VHF power transistor BLV21
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.
QUICK REFERENCE DATA
R.F. performance up to T
MODE OF OPERATION V
= 25 °C in an unneautralized common-emitter class-B circuit
h
CE
V
c.w. 28 175 15 > 10 > 65 1,4 + j1,85 33 − j27,5
PIN CONFIGURATION
handbook, halfpage
1
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
f
MHz
P
L
W
4
G
dB
p
η
%
z
I
Ω
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Y
mS
L
23
MSB057
Fig.1 Simplified outline, SOT123.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
VHF power transistor BLV21
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
= 0)
CESM
CEO
EBO
C(AV)
CM
=25°CP
mb
rf
stg
j
max. 65 V
max. 36 V
max. 4 V
max. 1,75 A
max. 5,0 A
max. 36 W
−65 to + 150 °C
max. 200 °C
handbook, halfpage
2
I
C
(A)
1.5
1
0.5
0
10 20 30 40
Tmb = 25 °C
Th = 70 °C
Fig.2 D.C. SOAR.
VCE (V)
MGP283
60
handbook, halfpage
P
tot
(W)
40
20
0
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
ΙΙΙ
ΙΙ
derate by 0.2 W/K
0.16 W/K
Ι
0 50 100
Th (°C)
MGP284
Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation = 15 W; T
= 74,5 °C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
August 1986 3
th j-mb(dc)
th j-mb(rf)
th mb-h
= 6,55 K/W
= 4,95 K/W
= 0,3 K/W
Philips Semiconductors Product specification
VHF power transistor BLV21
CHARACTERISTICS
=25°C
T
j
Collector-emitter breakdown voltage
VBE= 0; IC= 5 mA V
Collector-emitter breakdown voltage
open base; I
= 25 mA V
C
Emitter-base breakdown voltage
open collector; IE= 2 mA V
Collector cut-off current
V
= 0; VCE= 36 V I
BE
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
I
= 0,7 A; VCE=5 V h
C
Collector-emitter saturation voltage
(1)
(1)
IC= 2 A; IB= 0,4 A V
Transition frequency at f = 100 MHz
(1)
−IE= 0,7 A; VCB= 28 V f
−I
= 2 A; VCB= 28 V f
E
Collector capacitance at f = 1 MHz
I
=0;VCB= 28 V C
E=Ie
Feedback capacitance at f = 1 MHz
I
= 100 mA; VCE= 28 V C
C
Collector-flange capacitance C
(BR) CES
(BR) CEO
(BR)EBO
CES
SBO
SBR
FE
CEsat
T
T
c
re
cf
> 65 V
> 36 V
> 4V
< 2mA
> 2,5 mJ
> 2,5 mJ
typ. 50
10 to 100
typ. 0,65 V
typ. 650 MHz
typ. 625 MHz
typ. 18 pF
typ. 12,8 pF
typ. 2 pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0,02.
p
August 1986 4
Loading...