DISCRETE SEMICONDUCTORS
DATA SH EET
M3D372
BLV2047
UHF power transistor
Product specification
Supersedes data of 1999 Jan 28
1999 Jun 09
Philips Semiconductors Product specification
UHF power transistor BLV2047
FEATURES
• Emitter ballasting resistors for optimum
temperature profile
• Gold metallization ensures excellent reliability
• Internal input and output matching for easy design of
wideband circuits
• AlN substrate package for environmental safety.
APPLICATIONS
• Common emitter class-AB operation for PCN
(Personal Communication Networks) and
PCS (Personal Communication Services) base station
applications in the 1800 to 2000 MHz frequency range.
DESCRIPTION
NPN silicon planar power transistor in a 2-lead SOT468A
flange package with ceramic cap. The emitter is connected
to the flange.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common emitter test circuit.
h
PINNING - SOT468A
PIN DESCRIPTION
1 collector
2 base
3 emitter; connected to flange
handbook, halfpage
Top view
Fig.1 Simplified outline.
1
3
2
MBK200
MODE OF OPERATION
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
d
im
(dBc)
CW, class-AB 2000 26 60 ≥8.5 ≥40 −
2-tone, class-AB f1= 2000.0; f2= 2000.1 26 60 (PEP) ≥9 ≥33 ≤−30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 27 V
emitter-base voltage open collector − 3V
collector current (DC) − 10 A
total power dissipation Tmb=25°C − 270 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
1999 Jun 09 2
Philips Semiconductors Product specification
UHF power transistor BLV2047
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base P
thermal resistance from mounting base to heatsink 0.25 K/W
Note
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
collector-base breakdown voltage open emitter; IC=40mA 65 −−V
collector-emitter breakdown voltage open base; IC= 120 mA 27 −−V
emitter-base breakdown voltage open collector; IE=40mA 3 −−V
collector leakage current VCE= 26 V; VBE=0 −−8mA
DC current gain VCE= 10 V; IC=4A 45 − 100
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz;
note 1
C
re
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 41 − pF
= 270 W; Tmb=25°C; note 1 0.65 K/W
tot
− 72 − pF
Note
1. Capacitance of die only.
120
handbook, halfpage
h
FE
80
40
0
0426810
VCE=10V.
MBK396
I
(A)
C
160
handbook, halfpage
C
re
(pF)
120
80
40
0
0102030
f =1 MHz.
MBK397
V
(V)
CB
Fig.2 DC current gain as a function of collector
current; typical values.
1999 Jun 09 3
Fig.3 Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors Product specification
UHF power transistor BLV2047
APPLICATION INFORMATION
RF performance at T
=25°C in a common emitter test circuit.
h
MODE OF OPERATION
f
(MHz)
V
(V)
CE
I
CQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
C
d
im
(dBc)
CW, class-AB 2000 26 300 60 ≥8.5 ≥40 −
= 2000.0
f
2-tone, class-AB
1
f2= 2000.1
CDMA, class-AB 2000 26 500 12.5 typ. 9 typ. 22 ≤−46
26 300 60 (PEP) ≥9 ≥33 ≤−30
(1)
Note
1. CDMA test signal with peak to average ratio of 11.9 dB. Adjacent Channel Power (ACP) is measured at ±885 kHz
offset from the centre of the channel (2000 MHz) using a spectrum analyzer with the resolution set to 30 kHz.
Ruggedness in class-AB operation
The BLV2047 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the
following conditions: f
12
handbook, halfpage
G
p
(dB)
10
8
6
4
= 2000.0 MHz; f2= 2000.1 MHz; VCE= 26 V; ICQ= 300 mA; PL= 60 W (PEP); Tmb=25°C.
1
MBK398
60
η
C
G
p
η
C
(%)
50
40
30
20
100
handbook, halfpage
P
L
(W)
80
60
40
MBK399
(1)
(2)
(3)
2
0
04020 60 80 100
VCE=26V; ICQ= 300mA; f = 2000 MHz.
PL (W)
10
0
Fig.4 Power gain and collector efficiency as a
function of load power; typical values.
1999 Jun 09 4
20
0
08412
ICQ= 300 mA; f = 2000 MHz.
(1) VCE=28V.
(2) VCE=26V.
(3) VCE=24V.
P
(W)
D
Fig.5 Load power as a function of drive power;
typical values.