Philips BLV2046 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV2046
UHF power transistor
Product specification
1997 Aug 22
Philips Semiconductors Product specification
UHF power transistor BLV2046
FEATURES
• Emitter ballasting resistors for optimum temperature
profile
• Gold metallization ensures excellent reliability
• Internal input and output matching to achieve high
power gain and collector efficiency for an easy design of
PINNING - SOT460A
PIN SYMBOL DESCRIPTION
1 c collector
2 b base
3 e emitter, connected to flange
wideband circuits.
APPLICATIONS
handbook, halfpage
1
• Common emitter class-AB operation in PCN and PCS
applications in the 1800 to 1990 MHz frequency range.
DESCRIPTION
Top view
2
MBK093
3
NPN silicon planar transistor in a 2-lead SOT460A flange
package with a ceramic cap. The emitter is connected to
the flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
=25°C in a common emitter test circuit
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-AB 1990 26 50 ≥7.5 ≥40 −
2-tone, class-AB f
= 1990.0; f2= 1990.1 26 50 (PEP) typ. 8 typ. 33 typ. −30
1
d
im
(dBc)
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location
of the user. It must never be thrown out with the general or domestic waste.
1997 Aug 22 2
Philips Semiconductors Product specification
UHF power transistor BLV2046
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 27 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 12 A
average collector current − 12 A
total power dissipation Tmb=25°C − 195 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to mounting-base P
= 195 W; Tmb=25°C 0.9 K/W
dis
thermal resistance from mounting-base to heatsink 0.2 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
collector-base breakdown voltage IC= 20 mA; open emitter 65 −−V
collector-emitter breakdown voltage IC= 60 mA; open base 27 −−V
emitter-base breakdown voltage IE= 20 mA; IB= 30 mA; open collector 3.2 −−V
collector-base leakage current VCB= 40 V; IE=0 −−4mA
DC current gain VCE=5V; IC=1 A 20 − 100
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz;
− 60 − pF
note 1
C
re
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 40 − pF
Note
1. Die only.
1997 Aug 22 3
Philips Semiconductors Product specification
UHF power transistor BLV2046
APPLICATION INFORMATION
RF performance at T
=25°C in a common-emitter test circuit.
h
MODE OF
OPERATION
f
(MHz)
V
(V)
CE
I
CQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
C
d
im
(dBc)
CW class-AB 1990 26 200 50 ≥7.5 ≥40 −
2-tone class-AB f1= 1990.0; f2= 1990.1 26 200 50 (PEP) typ. 8 typ. 33 typ. −30
Ruggedness in class-AB operation
The BLV2046 is capable of withstanding a load mismatch corresponding to VSWR = 2:1 through all phases under the
following conditions: f
10
handbook, halfpage
G
p
(dB)
8
6
4
= 1990.0 MHz; f2= 1990.1 MHz; VCE= 26 V; ICQ= 200 mA; PL= 50 W (PEP) and Th=25°C.
1
MDA208
50
η
C
G
p
η
C
(%)
40
30
20
60
handbook, halfpage
P
L
(W)
40
20
MDA209
2
0
0204060
VCE=26V; ICQ= 200 mA; f = 1990 MHz.
PL (W)
10
0
Fig.2 Power gain and efficiency as a function of
load power; typical values.
0
010
VCE=26V; ICQ= 200 mA; f = 1990 MHz.
2468
PD (W)
Fig.3 Load power as a function of drive power;
typical values.
1997 Aug 22 4
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