Philips BLV2045N Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D171
BLV2045N
UHF power transistor
Preliminary specification
1999 Apr 23
Philips Semiconductors Preliminary specification
UHF power transistor BLV2045N
FEATURES
• Emitter ballasting resistors for optimum temperature
profile
• Gold metallization ensures excellent reliability
• Internal input and output matc hing fo r an easy design of
wideband circuits.
APPLICATIONS
PINNING - SOT390A
PIN SYMBOL DESCRIPTION
1 c collector
2bbase
3 e emitter, connected to flange
handbook, halfpage
1
• Common emitter class-AB operation in PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
2
3
DESCRIPTION
NPN silicon planar UHF power transistor in a 2-lead
Top view
MSA470
SOT390A flange package with a ceramic ca p. The emitter
is connected to the flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
=25°C in a common emitter test circuit.
h
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
CW, class-AB 1990 26 35 typ. 9.5 typ. 43 −
2-tone, class-AB f
= 1990.0; f2= 1990.1 26 35 (PEP) ≥9.5 ≥33 ≤−30
1
d
im
(dBc)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 27 V
emitter-base voltage open collector − 3V
collector current (DC) − 4A
average collector current − 4A
total power dissipation Tmb=25°C − 125 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
WARNING
Product and environmental safety - toxic materials.
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location
of the user. It must never be thrown out with the general or domestic waste.
1999 Apr 23 2
Philips Semiconductors Preliminary specification
UHF power transistor BLV2045N
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
thermal resistance from junction to
PL=35W; ηC= 40 %; Tmb=25°C1.4K/W
mounting base
thermal resistance from mounting
0.4 K/W
base to heatsink
collector-base breakdown
open emitter; IC=20mA 65 −−V
voltage
collector-emitter breakdown
open base; IC=60mA 27 −−V
voltage
emitter-base breakdown
open collector; IE=40mA 3 −−V
voltage
collector leakage current VCE=26V; VBE=0 −−4mA
DC current gain VCE=10V; IC=2A 45 − 100
collector capacitance VCB=26V; IE=ie=0;
− t.b.f. − pF
f = 1 MHz; note 1
feedback capac itanc e VCE=26V; IC= 0;
− t.b.f. − pF
f=1MHz
Note
1. Capacitance of die only.
APPLICATION INFORMATION
RF performance at T
MODE OF
OPERATION
=25°C in a common emitter test circuit.
h
f
(MHz)
V
(V)
CE
I
CQ
(mA)
P
(W)
L
G
p
(dB)
η
(%)
C
d
im
(dBc)
CW, class-AB 1990 26 150 35 typ. 9.5 typ. 43 −
2-tone, class-AB
= 1990.0; f2= 1990.1
f
1
26 150 35 (PEP)
≥9.5
typ. 10.2
≥33
typ. 35
≤−30
typ. −32
Ruggedness in class-AB operation
The BLV2045N is capable of with standi ng a load mismatch correspon ding to VSWR = 3 : 1 through all phases under the
following conditions: f
= 1990.0 MHz; f2= 1990.1 MHz; VCE= 26 V; ICQ= 150 mA; PL= 35 W (PEP); Tmb=25°C.
1
1999 Apr 23 3
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