Philips BLV2044 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV2044
UHF power transistor
Product specification
Supersedes data of 1996 Feb 09
1996 Nov 14
Philips Semiconductors Product specification
c
UHF power transistor BLV2044
FEATURES
• Emitter ballasting resistors for optimum temperature
profile
• Gold metallization ensures excellent reliability
• Internal input and output matching to achieve high
power gain and collector efficiency for an easy design of
wideband circuits.
APPLICATIONS
• Common emitter class-AB operation in base station
transmitters in the 1800 to 2000 MHz frequency range.
DESCRIPTION
NPN silicon planar transistor in a 2-lead SOT437A flange
package with a ceramic cap. The emitter is connected to
the flange.
QUICK REFERENCE DATA
RF performance at T
=25°C in a common emitter test circuit.
h
PINNING - SOT437A
PIN SYMBOL DESCRIPTION
1 c collector
2 b base
3 e emitter, connected to flange
olumns
Top view
1
b
3
2
Fig.1 SOT437A.
c
e
MAM112
MODE OF OPERATION
f
(MHz)
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
d
im
(dBc)
CW, class-AB 1950 26 15 ≥8 ≥40 −
CW, class-AB 1990 26 15 ≥8 ≥40 −
2-tone, class-AB f
= 1950; f2= 1950.1 26 15 (PEP) typ. 8.5 typ. 35 typ. −30
1
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Nov 14 2
Philips Semiconductors Product specification
UHF power transistor BLV2044
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-mb
R
th mb-h
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 28 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 3A
average collector current − 3A
total power dissipation Tmb=25°C − 57 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
thermal resistance from junction to
P
= 57 W; Tmb=25°C 3.07 K/W
tot
mounting base
thermal resistance from mounting base
0.4 K/W
to heatsink
10
handbook, halfpage
I
C
(A)
1
−1
10
11010
(1) Tmb=25 °C.
(2) Th=70°C.
(2)
Fig.2 DC SOAR.
(1)
VCE (V)
MGG283
2
80
handbook, halfpage
P
tot
(W)
60
(2)
40
20
0
0 40 160
(1) Continuous operation.
(2) Short-time operation during mismatch.
(1)
80 120
Fig.3 Power derating curves.
MGG284
Th (°C)
1996 Nov 14 3
Philips Semiconductors Product specification
UHF power transistor BLV2044
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
Note
1. Capacitance of die only.
collector-base breakdown voltage open emitter; IC=20mA 60 −−V
collector-emitter breakdown voltage open base; IC=10mA 28 −−V
emitter-base breakdown voltage open collector; IE= 0.5 mA 2.5 −−V
collector leakage current VCE= 12.5 V; VBE=0 −−4mA
DC current gain VCE= 26 V; IC= 1 A 45 100 120
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz;
− 16 − pF
note 1
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 8 − pF
120
handbook, halfpage
h
FE
80
40
0
0
(1) VCE= 26V; tp= 500 µs; δ =<1%.
(2) VCE=10V.
15234
(1)
(2)
MGG285
IC (A)
Fig.4 DC current gain as a function of collector
current; typical values.
30
handbook, halfpage
C
re
(pF)
20
10
0
01020 4030
f = 1 MHz.
VCE (V)
Fig.5 Feedback capacitance as a function of
collector-emitter voltage; typical values.
MGG286
1996 Nov 14 4
Loading...