Philips BLV2042 Datasheet

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BLV2042

UHF power transistor

Product specification
Supersedes data of 1996 Feb 09

1997 Jul 11

Philips Semiconductors Product specification

UHF power transistor BLV2042

FEATURES

• Emitter ballasting resistors for optimum
temperature profile

• Gold metallization ensures excellent reliability

• Internal input matching to achieve high power gain and

easy design of wideband circuits.

APPLICATIONS

• Common emitter class-AB operation in base stations in
the 1800 to 1990 MHz frequency range.

DESCRIPTION

NPN silicon planar epitaxial power transistor in an 8-lead
SOT409B SMD package with ceramic cap.
All leads are isolated from the mounting base.

QUICK REFERENCE DATA

RF performance at T

MODE OF OPERATION

=25°C in a common emitter test circuit.

mb

f

(MHz)

CW, class-AB 1950 26 4 ≥11 ≥40 −
CW, class-AB 1990 26 4 ≥11 ≥40 −

2-tone, class-AB f

= 1950; f2= 1950.1 26 4 (PEP) typ. 14 typ. 35 typ. −30

1

PINNING - SOT409B

PIN DESCRIPTION

1, 4, 5, 8 emitter

2, 3 base
6, 7 collector

handbook, halfpage

85

14

Top view

Fig.1 Simplified outline and symbol.

V

(V)

CE

P

(W)

L

G

(dB)

c

b

MSA467

p

η

C

(%)

e

d

im

(dBc)

1997 Jul 11 2

Philips Semiconductors Product specification

UHF power transistor BLV2042

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

Note

1. Transistor with metallized ground plane mounted on a printed-circuit board, see

recommendations in the General part of handbook SC19a”

collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 28 V
emitter-base voltage open collector − 4V
collector current (DC) − 1.2 A
collector current (average) − 1.2 A
total power dissipation Tmb=25°C; note 1 − 17 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C

“Mounting and soldering

.

10

handbook, halfpage

I

C

(A)

1

−1

10

11010

(1) Ts=60°C.

Fig.2 DC SOAR.

MGD934

(1)

V

(V)

CE

2

16

handbook, halfpage

P

tot

(W)

12

8

4

0

0 40 200

80 120 160

MGD935

Ts (°C)

Fig.3 Total power dissipation as a function of the

soldering point temperature.

1997 Jul 11 3

Philips Semiconductors Product specification

UHF power transistor BLV2042

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-mb

Note

1. Transistor with metallized ground plane mounted on a printed-circuit board, see

recommendations in the General part of handbook SC19a”

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CES

h

FE

C

c

C

re

thermal resistance from junction to

P

= 17 W; Tmb=25°C; note 1 10 K/W

tot

mounting base

“Mounting and soldering

.

collector-base breakdown voltage open emitter; IC= 5 mA 60 −−V
collector-emitter breakdown voltage open base; IC=10mA 28 −−V
emitter-base breakdown voltage open collector; IE= 0.5 mA 4 −−V
collector leakage current VCE= 26 V; VBE=0 −−1.3 mA
DC current gain VCE= 26 V; IC= 600 mA 30 − 120
collector capacitance VCB= 26 V; IE=ie= 0; f = 1 MHz − 6 − pF
feedback capacitance VCE= 26 V; IC= 0; f = 1 MHz − 2.5 − pF

120

handbook, halfpage

h

FE

80

40

0

0

(1) VCE= 26V; tp= 500µs; δ =<1%.
(2) VCE=10V.

0.4 0.8 1.61.2

(1)

(2)

Fig.4 DC current gain as a function of collector

current; typical values.

MGD936

IC (A)

50

handbook, halfpage

C

(pF)

40

30

20

10

f = 1 MHz.

C

c

C

0

re

050

10 20 30 40

Fig.5 Capacitance as a function of

collector-emitter voltage; typical values.

MGD947

VCE (V)

1997 Jul 11 4

Philips Semiconductors Product specification

UHF power transistor BLV2042

APPLICATION INFORMATION

RF performance at T

=25°C in a common emitter test circuit.

mb

MODE OF OPERATION

f

(MHz)

CW, class-AB 1950 26 15 4

V

(V)

CE

I

CQ

(mA)

P

(W)

L

G

p

(dB)

≥11 ≥40

typ. 13 typ. 45

η

(%)

C

d

im

(dBc)

−

CW, class-AB 1990 26 15 4 ≥11 ≥40 −

2-tone, class-AB f1= 1950; f2= 1950.1 26 15 4 (PEP) typ. 14 typ. 35 typ. −30

Ruggedness in class-AB operation

The BLV2042 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the
following conditions: f = 1950 MHz; V

16

handbook, halfpage

G

(dB)

12

p

8

G

p

η

C

= 26 V; ICQ= 15 mA; PL= 4 W; Tmb=25°C.

CE

MGD948

80

η

(%)
60

40

handbook, halfpage

C

P

(W)

6

L

4

MGD949

4

0

01 5

CW, class-AB; VCE= 26 V; ICQ= 15 mA; f = 1950 MHz; Tmb=25°C.

23 4

20

0

PL (W)

Fig.6 Power gain and collector efficiency as

functions of load power; typical values.

2

0

0

CW, class-AB; VCE= 26 V; ICQ= 15 mA; f = 1950 MHz; Tmb=25°C.

0.1 0.2 0.3
PD (W)

Fig.7 Load power as a function of drive power;

typical values.

1997 Jul 11 5