Philips BLV20 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV20

VHF power transistor

Product specification

August 1986

Philips Semiconductors Product specification

VHF power transistor BLV20

DESCRIPTION

N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.

It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.

PINNING - SOT123

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

QUICK REFERENCE DATA

R.F. performance up to T

= 25 °C in an unneutralized common-emitter

h

class-B circuit

MODE OF

OPERATION

V

CE

VfMHz

P

W

G

L

p

dB

%

η

z

i

Ω

c.w. 28 175 8 > 12 > 65 1,8 + j0,7 18 − j20

PIN CONFIGURATION

lfpage

1

23

4

handbook, halfpage

b

MBB012

MSB057

Fig.1 Simplified outline and symbol.

Y

L

mS

c

e

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of
which is toxic. The device is entirely safe provided that the BeO disc is
not damaged.

August 1986 2

Philips Semiconductors Product specification

VHF power transistor BLV20

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V

peak value v
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T

BE

=0)

CESM

CEO

EBO
C(AV)
CM

=25°CP

mb

rf

stg

j

max. 65 V
max. 36 V
max. 4 V
max. 0,9 A
max. 2,5 A
max. 20 W

−65 to + 150 °C

max. 200 °C

handbook, halfpage

1

I

C

(A)

0.5

0

10 20 30 40

Th = 70 °C

Fig.2 D.C. SOAR.

Tmb = 25 °C

VCE (V)

MGP272

30

handbook, halfpage

P

tot

(W)

20

10

0

0 50 100

I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch

ΙΙΙ

derate by 0.12 W/K

ΙΙ

0.1 W/K

Ι

MGP273

Th (°C)

Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.

THERMAL RESISTANCE

(dissipation = 8 W; T

= 72,4 °C, i.e. Th=70°C)

mb

From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R

August 1986 3

th j−mb(dc)
th j−mb(rf)
th mb−h

= 10,7 K/W
= 8,6 K/W
= 0,3 K/W

Philips Semiconductors Product specification

VHF power transistor BLV20

CHARACTERISTICS

T

=25°C

j

Collector-emitter breakdown voltage

V

= 0; IC= 2 mA V

BE

(BR)CES

Collector-emitter breakdown voltage

open base; IC= 10 mA V

(BR)CEO

Emitter-base breakdown voltage

open collector; IE= 1 mA V

(BR)EBO

Collector cut-off current

VBE= 0; VCE= 36 V I

CES

Second breakdown energy; L = 25 mH; f = 50 Hz

open base E
R

=10Ω E

BE

D.C. current gain

I

= 0,4 A; VCE= 5 V 10 to 100

C

Collector-emitter saturation voltage

(1)

(1)

IC= 1,25 A; IB= 0,25 A V

Transition frequency at f = 100 MHz

(1)

−IE= 0,4 A; VCB= 28 V f
= 1,25 A; VCB= 28 V f

−I

E

h

T
T

SBO
SBR

FE

CEsat

Collector capacitance at f = 1 MHz

IE=Ie= 0; VCB= 28 V C

c

Feedback capacitance at f = 1 MHz

I

= 50 mA; VCE= 28 V C

C

Collector-flange capacitance C

re
cf

> 65 V

> 36 V

> 4V

< 1mA

> 0,5 mJ
> 0,5 mJ

typ. 50

typ. 0,8 V

typ. 600 MHz
typ. 520 MHz

typ. 10 pF

typ. 7,1 pF
typ. 2 pF

Note

1. Measured under pulse conditions: t

≤ 200 µs; δ≤0,02.

p

August 1986 4