Philips BLV20 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV20
VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
VHF power transistor BLV20
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
PINNING - SOT123
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
QUICK REFERENCE DATA
R.F. performance up to T
= 25 °C in an unneutralized common-emitter
h
class-B circuit
MODE OF
OPERATION
V
CE
VfMHz
P
W
G
L
p
dB
%
η
z
i
Ω
c.w. 28 175 8 > 12 > 65 1,8 + j0,7 18 − j20
PIN CONFIGURATION
lfpage
1
23
4
handbook, halfpage
b
MBB012
MSB057
Fig.1 Simplified outline and symbol.
Y
L
mS
c
e
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of
which is toxic. The device is entirely safe provided that the BeO disc is
not damaged.
August 1986 2
Philips Semiconductors Product specification
VHF power transistor BLV20
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value v
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
=0)
CESM
CEO
EBO
C(AV)
CM
=25°CP
mb
rf
stg
j
max. 65 V
max. 36 V
max. 4 V
max. 0,9 A
max. 2,5 A
max. 20 W
−65 to + 150 °C
max. 200 °C
handbook, halfpage
1
I
C
(A)
0.5
0
10 20 30 40
Th = 70 °C
Fig.2 D.C. SOAR.
Tmb = 25 °C
VCE (V)
MGP272
30
handbook, halfpage
P
tot
(W)
20
10
0
0 50 100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
ΙΙΙ
derate by 0.12 W/K
ΙΙ
0.1 W/K
Ι
MGP273
Th (°C)
Fig.3 R.F. power dissipation; VCE≤ 28 V; f > 1 MHz.
THERMAL RESISTANCE
(dissipation = 8 W; T
= 72,4 °C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
August 1986 3
th j−mb(dc)
th j−mb(rf)
th mb−h
= 10,7 K/W
= 8,6 K/W
= 0,3 K/W
Philips Semiconductors Product specification
VHF power transistor BLV20
CHARACTERISTICS
T
=25°C
j
Collector-emitter breakdown voltage
V
= 0; IC= 2 mA V
BE
(BR)CES
Collector-emitter breakdown voltage
open base; IC= 10 mA V
(BR)CEO
Emitter-base breakdown voltage
open collector; IE= 1 mA V
(BR)EBO
Collector cut-off current
VBE= 0; VCE= 36 V I
CES
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
I
= 0,4 A; VCE= 5 V 10 to 100
C
Collector-emitter saturation voltage
(1)
(1)
IC= 1,25 A; IB= 0,25 A V
Transition frequency at f = 100 MHz
(1)
−IE= 0,4 A; VCB= 28 V f
= 1,25 A; VCB= 28 V f
−I
E
h
T
T
SBO
SBR
FE
CEsat
Collector capacitance at f = 1 MHz
IE=Ie= 0; VCB= 28 V C
c
Feedback capacitance at f = 1 MHz
I
= 50 mA; VCE= 28 V C
C
Collector-flange capacitance C
re
cf
> 65 V
> 36 V
> 4V
< 1mA
> 0,5 mJ
> 0,5 mJ
typ. 50
typ. 0,8 V
typ. 600 MHz
typ. 520 MHz
typ. 10 pF
typ. 7,1 pF
typ. 2 pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0,02.
p
August 1986 4
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