Philips BLV194 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BLV194

UHF power transistor

Product specification

January 1993

Philips Semiconductors Product specification

UHF power transistor BLV194

FEATURES

• Emitter-ballasting resistors for an
optimum temperature profile

• Gold metallization ensures
excellent reliability.

DESCRIPTION

NPN silicon planar epitaxial transistor
intended for common emitter
class-AB operation in the 900 MHz
communications band.

The transistor has a SOT171 flange
envelope with a ceramic cap.

All leads are isolated from the
mounting base.

PINNING - SOT171

PIN DESCRIPTION

1 emitter
2 emitter
3 base
4 collector
5 emitter
6 emitter

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

= 25 °C in a common emitter test circuit.

h

f

(MHz)

V

(V)

CE

P

(W)

L

(dB)

G

p

η

C

(%)

CW, class-AB 900 12.5 16 ≥ 7 ≥ 50

lfpage

1

3
5

Top view

2

4
6

MBA931 - 1

handbook, halfpage

b

MBB012

c

e

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.

January 1993 2

Philips Semiconductors Product specification

UHF power transistor BLV194

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CEO

V

CES

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

collector-emitter voltage open base − 16 V
collector-emitter voltage base short-circuited − 32 V
emitter-base voltage open collector − 3V
DC collector current − 3A
average collector current − 3A
total power dissipation Tmb =25°C − 46 W
storage temperature −65 150 °C
junction temperature − 200 °C

10

handbook, halfpage

I

C

(A)

1

−1

10

110

(1) Tmb=25°C.
(2) Th=70°C.

(1)

(2)

Fig.2 DC SOAR.

VCE (V)

MRC103

60

handbook, halfpage

P

tot

(W)

40

20

2

10

0

02040

(1) Continuous operation.
(2) Short-time operation during mismatch.

(2)

(1)

60 80

MRC102

100 120

o

Th (

C)

Fig.3 Power/temperature derating curve.

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS

R

th j-mb

R

th mb-h

thermal resistance from junction to mounting base P
thermal resistance from mounting base to heatsink 0.4 K/W

= 46 W; Tmb=25°C 3.8 K/W

dis

January 1993 3

THERMAL

RESISTANCE

Philips Semiconductors Product specification

UHF power transistor BLV194

CHARACTERISTICS

T

= 25 °C, unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CEO

V

(BR)CES

V

(BR)EBO

I

CER

h

FE

C

c

C

re

C

c-mb

Note

1. Measured under pulse conditions: t

collector-emitter breakdown voltage IB= 0; IC=40mA 16 −− V
collector-emitter breakdown voltage IC= 20 mA; VBE=0 32 −− V
emitter-base breakdown voltage IC= 0; IE= 5 mA 3 −− V
collector leakage current RBE= 700 Ω; VCE=16V −−1mA
DC current gain IC= 1.2 A; VCE= 10 V (note 1) 25 70 −
collector capacitance IE=ie= 0; VCB= 12.5 V; f = 1 MHz − 26 − pF
feedback capacitance IC= 0; VCB= 12.5 V; f = 1 MHz − 19 − pF
collector-mounting base capacitance − 2 − pF

≤ 200 µs; δ≤0.02.

p

100

handbook, halfpage

h

FE

80

60

40

20

0

02

VCE=10V.
Measured under pulse conditions: t

δ≤0.02.

≤ 200µs;

p

4

MRC098

I

(A)

C

Fig.4 DC current gain as a function of collector

current, typical values.

60

handbook, halfpage

C

c

(pF)

40

20

6

0

048

IE=ie= 0; f = 1 MHz.

MRC095

12 16

VCB (V)

Fig.5 Collector capacitance as a function of

collector-base voltage, typical values.

January 1993 4