Philips BLV193 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV193
UHF power transistor
Product specification
March 1993
Philips Semiconductors Product specification
UHF power transistor BLV193
FEATURES
• Emitter ballasting resistors for an
optimum temperature profile
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
intended for common emitter class-A
and class-AB operation in the
900 MHz communications band.
The transistor has a SOT171 flange
envelope with a ceramic cap. All
leads are isolated from the mounting
base.
PINNING - SOT171
PIN DESCRIPTION
1 emitter
2 emitter
3 base
4 collector
5 emitter
6 emitter
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATIONf(MHz)
= 25 °C in a common emitter test circuit.
h
V
(V)
CE
P
(W)
L
G
p
(dB)
η
(%)
C
d
(dB)
(note 1)
c.w. class-AB 900 12.5 12 ≥ 6.5 ≥ 50 −
c.w. class-A 900 12 6 (PEP) typ. 11 − typ. −30
Note
1. 2-tone measurement, f
= 900 MHz, fq= 901 MHz.
p
PIN CONFIGURATION
alfpage
1
3
5
Top view
2
4
6
MBA931 - 1
handbook, halfpage
b
MBB012
c
e
Fig.1 Simplified outline and symbol.
im
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
March 1993 2
WARNING
Philips Semiconductors Product specification
UHF power transistor BLV193
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 36 V
collector-emitter voltage open base − 16 V
emitter-base voltage open collector − 3V
collector current DC or average value − 3.5 A
total power dissipation up to Tmb=25°C − 44 W
storage temperature range −65 150 °C
junction temperature − 200 °C
10
handbook, halfpage
I
C
(A)
Th = 70 oC
1
−1
10
110
Fig.2 DC SOAR.
THERMAL RESISTANCE
Tmb = 25 oC
V
(V)
CE
MRA552
o
T
(
h
MRA553
C)
60
handbook, halfpage
P
tot
(W)
(2)
40
(1)
20
0
2
10
02040
(1) Continuous operation.
(2) Short time operation during mismatch.
60 80 100 120
Fig.3 Power derating curves.
SYMBOL PARAMETER CONDITIONS
R
th j-mb
R
th mb-h
from junction to mounting base P
from mounting base to heatsink 0.4 K/W
= 44 W; Tmb=25°C 4.0 K/W
dis
March 1993 3
THERMAL
RESISTANCE
Philips Semiconductors Product specification
UHF power transistor BLV193
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
C
c-mb
collector-base breakdown voltage open emitter;
Ic=20mA
collector-emitter breakdown voltage open base;
Ic=40mA
emitter-base breakdown voltage open collector;
IE= 0.5 mA
collector-emitter leakage current VCE=16V;
VBE=0
DC current gain VCE=10V;
Ic= 1.2 A;
note 1
collector capacitance VCB= 12.5 V;
IE=Ie=0;
f = 1 MHz
feedback capacitance VCE= 12.5 V;
Ic=0;
f = 1 MHz
collector-mounting base capacitance − 2 − pF
36 −− V
16 −− V
3 −− V
−−1mA
25 60 −
− 24.5 − pF
− 13 − pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0.02.
p
March 1993 4
Philips Semiconductors Product specification
UHF power transistor BLV193
100
handbook, halfpage
h
FE
80
60
40
20
0
02
Measured under pulse conditions: tp≤ 200µs; δ≤0.02.
VCE = 12.5 V
10 V
4
MRA559
IC (A)
Fig.4 DC current gain as a function of collector
current, typical values.
50
handbook, halfpage
C
c
(pF)
40
30
20
10
0
6
048
IE=ie= 0; f = 1 MHz.
MRA546
12 16
V
(V)
CB
Fig.5 Collector capacitance as a function of
collector-base voltage, typical values.
40
handbook, halfpage
C
re
(pF)
30
20
10
0
048
f = 1 MHz.
MRA554
12 16
VCE (V)
Fig.6 Feedback capacitance as a function of
collector-emitter voltage, typical values.
March 1993 5
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