Philips BLV11 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BLV11
VHF power transistor
Product specification
August 1986
Philips Semiconductors Product specification
VHF power transistor BLV11
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
QUICK REFERENCE DATA
R.F. performance up to T
= 25 °C in an unneutralized common-emitter class-B circuit
h
MODE OF OPERATION V
c.w. 13,5 175 15 > 8,0 > 60 2,3 + j2,2 130 − j4,4
c.w. 12,5 175 15 typ. 7,5 typ. 67 −−
PIN CONFIGURATION
handbook, halfpage
1
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
V
CE
f
MHz
4
P
L
W
G
dB
p
η
%
z
i
Ω
Y
mS
L
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
23
MSB057
Fig.1 Simplified outline, SOT123.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986 2
Philips Semiconductors Product specification
VHF power transistor BLV11
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
peak value v
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Collector current (average) I
Collector current (peak value); f > 1 MHz I
R.F. power dissipation (f > 1 MHz); T
Storage temperature T
Operating junction temperature T
BE
=0)
CESM
CEO
EBO
C(AV)
CM
=25°CPrfmax. 36 W
mb
stg
j
max. 36 V
max. 18 V
max. 4 V
max. 3 A
max. 8 A
−65 to + 150 °C
max. 200 °C
3.5
handbook, halfpage
I
C
(A)
2.5
1.5
0.5
01020
Th = 70 °C
Tmb = 25 °C
VCE (V)
MGP261
handbook, halfpage
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 15 W; T
= 74,5 °C, i.e. Th=70°C)
mb
From junction to mounting base (d.c. dissipation) R
From junction to mounting base (r.f. dissipation) R
From mounting base to heatsink R
60
P
rf
(W)
40
20
0
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
ΙΙΙ
ΙΙ
derate by 0.2 W/K
0.16 W/K
Ι
0 50 100
Th (°C)
MGP262
Fig.3 R.F. power dissipation; VCE≤ 16,5 V; f > 1 MHz.
th j−mb(dc)
th j−mb(rf)
th mb−h
= 6,55 K/W
= 4,95 K/W
= 0,3 K/W
August 1986 3
Philips Semiconductors Product specification
VHF power transistor BLV11
CHARACTERISTICS
T
=25°C
j
Collector-emitter breakdown voltage
V
= 0; IC= 10 mA V
BE
Collector-emitter breakdown voltage
open base; IC= 50 mA V
Emitter-base breakdown voltage
open collector; IE= 4 mA V
Collector cut-off current
VBE= 0; VCE= 18 V I
Second breakdown energy; L = 25 mH; f = 50 Hz
open base E
R
=10Ω E
BE
D.C. current gain
I
= 1,5 A; VCE= 5 V h
C
Collector-emitter saturation voltage
(1)
(1)
IC= 4,5 A; IB= 0,9 A V
Transition frequency at f = 100 MHz
(1)
−IE= 1,5 A; VCB= 13,5 V f
−I
= 4,5 A; VCB= 13,5 V f
E
Collector capacitance at f = 1 MHz
I
= 0; VCB= 13,5 V C
E=Ie
Feedback capacitance at f = 1 MHz
IC= 200 mA; VCE= 13,5 V C
Collector-flange capacitance C
(BR)CES
(BR)CEO
(BR)EBO
CES
SBO
SBR
FE
CEsat
T
T
c
re
cf
> 36 V
> 18 V
> 4V
< 4mA
> 2,5 mJ
> 2,5 mJ
typ. 40
10 to 100
typ. 1,0 V
typ. 850 MHz
typ. 800 MHz
typ. 32 pF
typ. 23 pF
typ. 2 pF
Note
1. Measured under pulse conditions: t
≤ 200 µs; δ≤0,02.
p
August 1986 4
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